Imec Gets New Research Partners
News - Staff reports
Author: LIGHTimes News Staff
July 13, 2010... Imec is a multi-partner research and development program for gallium nitride-on-silicon (GaN-on Si) process and equipment technologies for the production of solid state lighting and next generation power electronics on 8-inch Si wafers. Micron Technology, Applied Materials, and Ultratech will actively participate in the IIAP at imec in Leuven, Belgium. The on-site participation enables the partner companies to access to next-generation LED and power electronics processes, equipment and technologies.
Gallium nitride offers higher breakdown voltage and current capacity than silicon. However, GaN-based devices have not achieved the same economies of scale as silicon.
While most LED manufacturing is typically done on expensive 4-inch sapphire substrates,Imec deposits the GaN material on much less expensive 8-inch silicon substrates.
In addition, imec’s GaN-on-Si program is utilizing an Applied Materials mainframe to develop 8 inch GaN-on-Si technology that is compatible with the CMOS fab infrastructure. This is expected to further enhance productivity and result in lowering device cost.
Rudi Cartuyvels, Vice President & General Manager Process Technology at imec stated, “We are excited to welcome 3 major companies to our GaN-on-Si IIAP. Less than a year after the program’s launch in July 2009, we have assembled a strong consortium, including IDMs and equipment suppliers, and we expect more companies to join in the near future. This collaboration reflects the value of imec’s research on GaN-on-Si as a reliable cost-effective solution for next-generation LED and power electronics devices.”
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