Fujitsu Develops Ultra-Low-Noise Transistor for Millimeter-Band Receivers
Source/Type: News - Staff reports

Author: CompoundSemi News Staff

June 7, 2010... Fujitsu of Tokyo announced the development of an indium phosphide high electron mobility transistor (HEMT) operating at 94 GHz that the company says reduces the noise level by 30 percent compared to previous technologies. The transistor uses the company's proprietary "space cavity" structure to produce noise levels of merely 0.7 decibels. The company predicts that the novel noise-lowering technology will enable sensitivity enhancements in millimeter-band receivers.

According to Fujitsu, such receivers could extend the range of high-capacity wireless transmission distance by 20 percent. The would put it on par with optical transmission over fiber-optic cabling. Fujitsu points out that such technology could help bring wireless networks where fiber-optic cabling cannot go. Additionally the company says that the transistor's use in image sensors which are being developed for anti-terrorist initiatives at major airports could reduce the time it takes to capture images by more than half.

Part of this research was conducted under contract as part of the Research and Development Project for Expansion of Radio Spectrum Resources of Japan's Ministry of Internal Affairs and Communications. Details of this technology was presented at the 22nd International Conference on Indium Phosphide and Related Materials (IPRM 2010), held May 31 - June 4 in the city of Takamatsu.

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