Cree’s GaN HEMT MMIC Power Amplifiers Expand Company's GaN MMIC PA Frequency Range Through X-Band
Source/Type: News - Staff reports

Author: CompoundSemi News Staff

May 24, 2010... Cree has developed five new GaN HEMT MMIC amplifiers that it says increase the company's range of available HEMT MMIC amplifiers to include frequencies through X-Band. As part of a sample release, Cree's GaN MMICs are currently available as bare die and are targeted to be available in packaged formats later this year.

“We are pleased to expand our existing GaN power amplifier MMIC line and introduce our first GaN LNA MMIC product. The introduction of these MMICs expands our leadership position in providing GaN solutions that improve system performance beyond what can be realized using traditional GaAs MMIC technology for applications such as communication systems, homeland defense, electronic warfare and radar from S-band through X-band,” said Jim Milligan, Cree, director of RF & Microwave Products.

Cree introduced the CMLA2540001D, a low noise amplifier (LNA) GaN HEMT MMIC, with a 1.7 dB Noise Figure and a frequency range of 2.5 to 4 GHz The company also released the CMPA2060025D wide band 25W, 2 to 6 GHz MMIC power amplifier. Cree introduced the exceptionally small CMPA2735075D high power MMIC amplifier that delivers 75W with PAE of 60%. The newly introduced CMPA5585025D provides more than 25 watts output power over the 5 to 8 GHz band and is ideal for applications in point-to-point radios, satcom, test instrumentation and EMC amplifiers. Cree's CMPA801B025D MMIC power amplifier covers the 8 to 11 GHz frequency range with a typical output power capability of 25 watts. 

See the Current Industry News Summary
See this article in its orginal context, with the other current news from the same week