Efficient Power Conversion Corporation Introduces 40 V to 200V Enhancement Mode GaN Power Transistors
Source/Type: News - Staff reports

Author: CompoundSemi News Staff

March 8, 2010... Efficient Power Conversion Corporation (EPC) of El Segundo, California USA introduced a family of enhancement mode power transistors. The transistors are based on EPC's proprietary gallium nitride on silicon technology. They span a range of 40 Volts to 200 Volts, and 4 milliohms to 100 milliohms. The company says that the power transistors demonstrate significant performance advantages over state-of-the-art silicon-based power MOSFETs. EPC’s technology produces devices that are smaller than similar resistance silicon devices and have many times superior switching performance. Applications such as DC-DC power supplies, point-of-load converters, class D audio amplifiers, notebook and netbook computers, LED drive circuits, telecom base stations, and cell phones can reportedly benefit from the improved performance.

EPC notes that its enhancement mode (normally OFF) GaN technology was explicitly developed to replace power MOSFETs. The transistors are produced in a standard silicon CMOS foundry on 150mm (6 inch) silicon wafers. “EPC’s GaN on silicon power transistors represent the first major breakthrough in power conversion technology since the development of the commercial power MOSFET. We have developed a very cost effective and reliable technology that is also very easy for anyone with power MOSFET experience to use in a way that will significantly boost their power management system performance,” said Alex Lidow, EPC’s co-founder and Chief Executive Officer. Company News Release

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