Aixtron’s New AIX G5 System Achieves Productivity Targets at Epistar
Source/Type: News - Staff reports

Author: CompoundSemi News Staff

February 22, 2010... Aixtron AG today announced that its next generation MOCVD Platform AIX G5 HT has demonstrated high quality GaN deposition at very high growth rates. According to Aixtron, the AIX G5 platform has operated at high pressure above 600mbar and provided GaN/InGaN uniformities. Aixtron says that the epitaxial runs were performed at Epistar Corporation, located in the Hsinchu Science-based Industrial Park, Taiwan. Aixtron boasts that the runs were demonstrated consecutively without reactor baking or swapping of any parts. The MOCVD reactor is now being transferred into mass production.

Aixtron says that Platform AIX G5 HT provides the largest wafer capacity (56x2” / 14x4” / 8x6” among its MOCVD systems. The new reactor design features reportedly allow high growth rates and consecutive runs without baking or swapping of parts. Overall, this results in a more than doubled high quality throughput compared to the previous generation, Aixtron indicated. Aixtron contends that its AIX G5 HT systems provide fastest time to production with highest reproducibility from tool-to-tool, which enables a faster production ramp up as compared to any other reactor, with easy copy-and-paste process transfer, a key factor in a rapidly booming market with limited numbers of available process experts.

Gerd Strauch, Vice President Corporate Product Design & Engineering, and responsible for Planetary Reactor Development at Aixtron AG commented, "We have successfully transferred the epitaxial growth performance from our laboratory 1:1 to the system at Epistar’s site.” Aixtron News Release

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