Fujitsu Makes GaN HEMT to Improve Power Supply Efficiency
Source/Type: Reported News

Author: CompoundSemi News Staff

June 24, 2009... Fujitsu announced a new gallium nitride-based high electron mobility transistor that it says minimizes power loss in power supplies. The company says that this results in reduced power consumption of electronic equipment such as IT hardware and home electronics. According to Fujitsu, the new technology blocks the flow of current from power supplies in stand-by mode and produces high-density current when turned on (on-state current)(3), and has the potential to cut power consumption of electronic equipment by one-third. If applied to data centers, Fujitsu's new GaN HEMT would be able to reduce total power consumption by 12%.

The company says that power lost as heat can account for up to 30% or more of the power lost from an electronic device such as a laptop, and in some cases additional power is required for cooling equipment. Details of this technology were presented at the Device Research Conference 2009 (DRC 2009) being held at Penn State University in University Park, Pennsylvania, U.S. from June 22 to 24. Company News Release

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