RFMD Introduces Family of Amplifiers for Applications with Frequencies Up to 35 GHz
Source/Type: News - Staff reports

Author: CompoundSemi News Staff

June 22, 2009... RF Micro Devices (RFMD) of Greensboro, North Carolina USA, has added five new distributed amplifiers for broadband, high-frequency applications. The company boasts that SDA-1000 through 5000 series of distributed amplifiers provide superior gain and output power (from 20 GHz to 35 GHz) for high frequency commercial, military, and space applications. The distributed amplifiers are reportedly based upon GaAs pseudomorphic high electron mobility transistor (pHEMT) technology. According to the company, two follow-on high-performance amplifiers, to be introduced as an extension to this product family, will deliver similar wideband high-frequency performance and will increase operating frequency up to 50 GHz while having low noise.

"These new products deliver superior performance and provide a solid foundation for our broadband microwave amplifier product family," said Jeff Shealy, general manager of RFMD's Defense and Power business unit.

Kevin Kobayashi, an RFMD Fellow, stated, "We are also developing products with higher sensitivity, linearity and multi-Watt power output exploiting advanced semiconductors like gallium nitride and indium phosphide." Company News Release

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