Cree Demonstrates Record Efficiency GaN HEMTs
Source/Type: Reported News

Author: CompoundSemi News Staff

June 8, 2009... Cree of Durham, North Carolina USA, publicly demonstrated its new commercial high-power RF transistors at the 2009 IEEE/MTT-S International Microwave Symposium being held in Boston this week. Among the new high-power RF transistors demonstrated was a record 50 percent efficiency Doherty transistor amplifier. According to Cree, the demonstration amplifiers combine Cree's latest 120W and 240W GaN HEMT transistors linearized with Texas Instruments' GC5325, a single-chip wideband digital pre-distortion transmit processor, to enable improved power efficiency for wireless base station applications. The record efficiency, 2.11 to 2.17 GHz 480 Watt peak power Doherty amplifier, reportedly has greater than 80 Watts average power under a W-CDMA (6.5dB Peak/Average) corrected to better than -50dBc ACLR covering well over the 2.11 to 2.17 GHz UMTS band. This Doherty amplifier employs the company's new CGH21240F pre-matched 42 percent efficient 240W GaN HEMT transistor.

The 240 Watt class A/B amplifier, using the CGH21240F transistor, having 40 Watts average power under a W-CDMA (6.5dB Peak/Average) corrected to better than -50dBc ACLR covering the 1.8 to 2.3 GHz operating bandwidth. Cree also demonstrated at a 35 percent efficient, 870MHz 120 Watt class A/B amplifier, using the new CGH09120F transistor. It has 20 Watts average power under a two carrier W-CDMA (7.5dB Peak/Average) signal corrected to better than -50dBc ACLR covering 25% instantaneous bandwidth. Cree also demonstrated the 180W class CGH40180PP. Company News Release

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