TriQuint Awarded Phase 3 DARPA R&D Contract
Source/Type: Reported News

Author: CompoundSemi News Staff

June 3, 2009... TriQuint Semiconductor of Hillsboro, Oregon USA announced that the Army Research Laboratory has awarded it leadership of Phase III of a multi-year gallium nitride (GaN) research and development contract. TriQuint says that the contract, which gets its funding form the Defense Advanced Research Projects Agency (DARPA), was awarded based on the fact that TriQuint surpassed Phase II goals in an overall program to develop new high power, wideband GaN amplifiers for a range of defense applications. TriQuint is teamed with BAE Systems, IQE-RF Corporation, and Lockheed Martin for Phase 3 of the project. Beginning in 2005, TriQuint executed Phase II of the gallium nitride program (valued at $15.8 million). Since that time, the company points out that it has achieved milestones in the project including improved power density, efficiency and device ruggedness. The next phase of the program (valued at $16.5 million) seeks to improve device reliability for 48V operation, increase operational lifetime, and extend performance to cover the high end of contracted frequency ranges. Phase 3 is expected to be completed in two years. "In Phase II, we developed a high performance, reliable gallium nitride process with excellent reproducibility and high yield," said Cathy Lee, TriQuint’s Phase III program manager. "Since the program began we have achieved key milestones including 48V operation and superb high frequency performance." TriQuint News Release

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