Researchers Find that Hydrogen Disturbs Zinc Oxide Doping
Source/Type: News - Staff reports

Author: CompoundSemi News Staff

December 9, 2008... Reseachers at Ruhr-Unversity in Bochum, have found that hydrogen accounts for the difficulties associated with p-doping of zinc oxide. Previously it was postulated that oxygen impurities caused defects in the zinc oxide crystal lattice structure. However, A team of chemical scientists at the Ruhr-University in Bochum, working under the auspices of Prof. Christof Wöll, is a step closer to unveiling the reason why doping with zinc oxide is so difficult. They specifically found that controlling the concentration of hydrogen atoms during the production of intrinsic zinc oxide is the the key to the routine use of ZnO as semiconductor. The scientists have documented their results in the journal Physical Review Letters. Ruhr-University in Bochum News Release,

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