Source/Type: CompoundSemi Online -- Compound Semiconductor Supply Chain News - Company News Releases

Nitronex and Nujira Collaborate On High Efficiency WiMax Power Amplifiers

April 22, 2008... Nujira and Nitronex to collaborate on advanced PA architectures for Wireless Infrastructure

Bath, UK – The Basestation Conference -— Nitronex, the leading producer of GaN-on-Silicon RF power devices and RF power efficiency specialists Nujira are collaborating to create a Power Amplifier reference design for WiMax basestations delivering over 45% efficiency using GaN devices and High Accuracy Tracking (HAT™) technology.

Using a 4 channel WCDMA waveform the companies have been able to realise over 44dBm of linear power with 45% efficiency at a linearity of -55dBC and using conventional DPD (Digital Pre-Distortion) techniques. The results were achieved using production ready devices from both companies. This same solution demonstrated its flexibility by achieving 43.2dBm of linear power with 43% efficiency under a demanding WiMAX waveform with 20MHz video bandwidth and 8.2dB PAR.

“Nitronex believes that GaN devices will most clearly establish their value when combined with advanced power amplifier techniques such as Nujira’s HAT™ technology,” said Chris Rauh, VP of marketing and sales at Nitronex. “We are especially excited that the results come from production ready technology from both companies which greatly increases our customers confidence in adopting this approach.”

Nujira VP strategy & marketing Julian Hildersley added, “Nujira HAT™ envelope tracking technology can greatly enhance the efficiency of power amplifiers, allowing the creation of modules that deliver both high energy efficiency over a broad frequency spectrum and flexibility. The same Power Modulator module can equally well be applied to WiMax, WCDMA or even DVB and other transmission. Our reference design work with Nitronex very effectively demonstrates how well our technology works in a real circuit.”

Samples, of the NPT25100, simulation models and standard evaluation boards are available immediately from Nitronex. Samples of the amplifier pallet optimised for High Accuracy Tracking integrated with Nujira’s power modulator enabling customers to develop amplifiers using their own DPD systems will be available in 3Q08.

About Nitronex Specialising in the development and manufacturing of gallium nitride-on-silicon (GaN-on-Si) RF power devices, Nitronex is the global leader in high-performance GaN-on-Si RF power devices. Based on its patented SIGANTIC® process – gallium nitride on silicon technology – Nitronex is at the forefront of commercialising GaN technology for RF applications. The company’s ability to combine the disciplines of material growth, wafer processing, device design and wireless applications knowledge is unique to the industry.

Nitronex was founded in 1999 by graduates of the wide bandgap programme at North Carolina State University and is headquartered in Durham, North Carolina. It holds 19 patents with 19 others pending.

For more information, contact: Ray Crampton
Director of Marketing, Nitronex
919 424 5175 1


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About Nujira

Nujira's mission is to dramatically improve the energy efficiency of cellular network base stations and digital broadcast transmitters by reducing the amount of waste energy dissipated as heat in the RF Power Amplifier circuit. Nujira High Accuracy Tracking (HAT™) Modulator technology dynamically controls the power supply to the circuit in line with the transmission performance required, enabling the creation of highly efficient RF Power Amplifiers for 3G and 4G cellular networks and DVB digital broadcast transmissions.

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