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The Basics of Compound (vs. Silicon) Semiconductors
Source/Type:
Reference Materials
April 4, 2001... Compound Semiconductor based devices are used in a wide variety of electronic
and photonic systems. They essentially do what silicon-based devices cannot.
Whereas silicon is the most popular material used today to make electronic devices,
the compounds are considered a category of semiconductors that perform functions
beyond the physical limits of the electronic properties of silicon. And when
it comes to light gathering or light emitting, the compounds are unsurpassed
by silicon which is a very poor light emitting material. The world we deal in
is essentially made up of photons and electrons, thus the need for basic clarification
of terms.
Photonics is a term sometimes used interchangeably with "opto" which
is short for "optical" and used especially when combining light-related
devices with electronics, thus you'll often hear or see "optoelectronics."
But "photonics" is the more valid and eclectic term. Photonics is
defined by Photonics Spectra magazine in their masthead as, "the
technology of generating and harnessing light and other forms of radiant energy
whose quantum unit is the photon. The range of applications of photonics extends
from energy generation to detection to communications and information processing."
Since it is an area where silicon cannot adequately compete, photonics, which
includes the all-optical networks driving today's broadband applications, is
where the compound semiconductor clearly shine. Whereas silicon can only do
silicon, there are are world of different kinds and types of compound semiconductor
materials and devices. As the silicon semiconductor industry runs up against
its physical limits, it turns to the compound semiconductor industry for next
generation devices and integrated solutions. Although compound semiconductors
have been actively on the scene for about 30 years, the field is only now becoming
popular. It's a bit like being the classic "20 year overnight success"
story, and all newcomers to the field are heartily welcome.
The various elements that are combined to become compound semiconductors can
be found in any Periodic Table of Elements. The most common material combinations
used in compound semiconductor technology come from the Group III and Group
V materials, although II-VIs and some from the Group IVs are also growing in
popularity as applications become more real and widespread. The most popular
of the compounds are Gallium (Ga) and Arsenic (As) and referred to as Gallium
Arsenide or GaAs and pronounced 'gas.' Indium (In) and Phosphorus (P) make Indium
Phosphide or InP (no easy nickname) and Silicon (Si) and Carbon (C) make Silicon
Carbide or SiC (also no nickname). Gallium and various Nitrogen elements make
Gallium Nitride, or GaN which is simply pronounced as 'gan.' Often, more than
two elements are combined, with Aluminum (Al) included in the mixture to make
alloys which take on exotic or complicated sounding combinations such as InGaP
(in-gap), AlGaP (al-gap) and AlGaN (al-gan). No matter how they are pronounced,
all combinations are tremendously exciting, and when properly prepared for device
manufacturing, they can perform feats previously thought impossible.
Like silicon, compound semiconductor starting material is "pulled"
from equipment called "crystal pullers" into boules of bulk crystals,
using a starting seed that grows the boule larger and larger depending on the
state of the art of that particular material science. Whereas silicon bulk substrates
are available in 8 inch and even 13 inches in diameter due to the maturity of
that technology, GaAs is at 6 inch, InP at 2-4 inch and SiC at 3 inch. From
those starting boules, wafers are sliced and polished. Some wafers are clear,
some brightly colored and most look like silicon and are very thin and bright,
shiny silver. Most all of them are brittle. Breakage and defects within the
boule or wafer continue to threaten yields. Even silicon isn't defect free,
but all the compounds have a long way to go before they are as consistently
reliable as silicon. GaAs is the furthest along, thus the most defect-free.
InP and SiC are the next most mature, with Mercury (Hg) Cadmium (Cd) Tellurium
(Te) (also known as "MCT" or "mer-cad-tel" ) and GaN only
available as mere chunks and difficult to obtain. However... the components
that can be designed from a mere piece of those little "chunks" of
MCT or GaN are absolutely incredible and literally extend the human senses beyond
belief! Whatever the size, shape or color, the boules and resulting wafers can
be semi-insulating or semi-conducting, although all are referred to as semiconductor
materials. (The semiconductor business and compounds in particular are fully
of exceptions, often using somewhat misleading terminology). Whether silicon
or compound semiconductors, the wafers are always sliced and polished to form
the thin starting substrates on which the ultimate electronic or photonic devices
are etched or grown.
Device processing takes one of two primary routes. The most mature process
is GaAs MESFET which is similar to silicon's CMOS or CMOS processing and is
done with the wafer going through a variety of etching and mask steps, ballroom
style, within a clean room environment full of humans in clean room attire lovingly
called "bunny suits" moving themselves and the wafers from station
to station until the processing is complete. One of the reasons the compound
semiconductors have taken giant strides in development and popularity is due
to advancements in a process called epitaxy which is required to grow heterostructures
such as HBTs and HEMTs. All of these are types of transistors. Unlike the human-intense
"ballroom style" processing, compound semiconductor epitaxial processing
takes place in reactors, or production platforms, that do not require as many
humans nor their stations or floorspace. Epitaxy platforms are becoming progressively
more robotic in nature, and considering the toxicity of the materials used and
expense and space required for ballroom production, that makes profound sense.
A high volume MOCVD production unit, for example, can work 24 hours a day, 7
days a week, without complaining or requiring a paycheck. In general, one individual
production platform costs about $1 million. In manufacturing environments such
as exist in Taiwan, where HB-LED are being produced like jelly beans, strings
of 10 or more of these machines are working continuously with relatively few
humans, and sharing vats of starting gases and solids that are used to grow
the devices, atomic layer by atomic layer. From there, again like silicon, the
individual devices are carefully tested, separated and packaged for insertion
into an electronic or photonic system such as a cellphone, networking systems,
or integrated into systems requiring high brightness (HB) LEDs or laser diodes
(LDs), or the multijunction solar cells that keep a satellite functioning.
Currently, the most exciting of the compounds are InP-based or GaN-based. InP
is the generic compound semiconductor material of choice for the most advanced
fiberoptic communication networks due to its ability to function reliably, and
move light, at incredibly high speeds. GaN is the material of choice for HB-LEDs
and laser diodes in the blues spectrum and GaN is also being developed for next-generation
electronic devices that perform beyond the capability of the more mature technologies,
such as silicon and GaAs... and possibly even InP. GaN, however, is the one
exception to the rule when it comes to processing as there is still no usable
GaN bulk crystal, or boule, available on the commercial market. The best that
can be produced at this stage is about the size of the tip of your pinkie finger.
Current GaN-based devices are grown exclusively by epitaxy on top of a friendly
substrate such as sapphire, SiC or AlN, although tremendous efforts are now
underway to develop usable bulk starting wafers. The vast majority of blue spectrum
devices, such as blue, green, violet and ultraviolet LEDs and LDs, are now based
on GaN technology. Because of its ability to store data or information more
compactly, GaN is destined to replace today's CDs, DVDs and hard disk drives.
In addition to its outstanding photonic and electronic capabilities, the main
driver behind GaN development is that it can produce devices that are considerably
more compatible with the natural environment and hold significant promise to
reduce our world's escalating consumption of energy.
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