Dialog Semiconductor plc of London, UK, announced that it is demonstrating its first gallium nitride (GaN) power IC product. Dialog noted that it produced the new GaN power IC using Taiwan Semiconductor Manufacturing Corporation’s (TSMCs) 650 Volt GaN-on-Silicon process technology. According to Dialog Semiconductors, the power IC, DA8801 together with Dialog’s patented digital Rapid Charge(TM) power conversion controllers will enable more efficient, smaller, and higher power density adapters compared to traditional Silicon field-effect transistor (FET) based designs.
Dialog indicated that it will first target the fast charging smartphone and computing adapter segment with its GaN solutions. The company already boasts a market share of over 70 percent with its power conversion controllers in the fast charging smartphone and computer adapter market.
Mark Tyndall, SVP Corporate Development and Strategy, Dialog Semiconductor commented, “Following our success in BCD-based power management ICs (PMICs), as an early GaN innovator, Dialog once again leads the commercialization of a new power technology into high-volume consumer applications.”
GaN technology reportedly offers the world’s fastest transistors, which are essential for high-frequency and ultra-efficient power conversion. The company says that the DA8801 half-bridge integrates gate drives and level shifting circuits with 650V power switches to provide a solution with up to 94 percent energy efficiency that reduces power losses by up to 50 percent. The company claims that the new technology can reduce the size of power electronics by up to 50 percent and says that this reduction in size will enable universal chargers for mobile devices.
Maria Marced, President of TSMC Europe said, “Dialog’s first GaN product delivers on the promise of GaN while bringing the integration to a higher level.”
The DA8801 will be available in sample quantities in Q4 2016. ￼