IQE reports that it will be taking part in a US Defense Advanced Research Projects Agency (DARPA) contract led by Raytheon Integrated Defense System to develop Compound Semiconductor Materials on Silicon (COSMOS). IQE’s Pennsylvania-based manufacturing facility will help develop the epitaxial growth process. Phase I of the program began in September 2007 to develop and demonstrate a viable process to integrate compound semiconductor materials with silicon for dramatically improved linearity, dynamic range, and bandwidth of radio frequency (RF) devices.
After phase I was completed, Phase II was awarded to focus on improving the yield and density of the heterogeneous epitaxial growth of InP HBTs in conjunction with conventional silicon based CMOS processes. The program hopes to integrate high-performance compound semiconductors with low-cost commercial complementary metal oxide semiconductor silicon (CMOS) wafers for superior cost-benefit performance compared with either technology individually.
Other partners in the COSMOS project are Raytheon Systems Limited in Glenrothes, Scotland; Teledyne Scientific Imaging Company in Thousand Oaks, Calif.; Massachusetts Institute of Technology in Cambridge, Mass.; Paradigm Research LLC in Windham, N.H.; Soitec in Grenoble, France; and Silicon Valley Technology Center in San Jose, Calif.
“Selective placement of semiconductor compounds on silicon is an important achievement because it proves that optimal circuit performance can be produced through a heterogeneous, high-yield, monolithic integration process,” said Dr. Tom Kazior, program manager at Raytheon IDS. IQE News Release