Cree Launches New 1200V SiC MOSFET for EV Drivetrains

Wolfspeed, a Cree Company, reported a performance breakthrough in the ability to power the electric vehicle drivetrains using its new third-generation 1200V SiC MOSFET family. The company claims that this new switching device, which enables high-voltage power conversion, brings increased efficiency to EV drivetrains. At the same time, Cree says that the MOSFET lowers system costs, and it may eventually lead to an increased driving range and an improved overall EV performance.

Gregg Lowe, CEO of Cree, Inc. “Cree is at the forefront of enabling this dramatic change in the automotive industry with new technologies, such as Wolfspeed’s new silicon carbide MOSFET portfolio, that help foster the adoption of electric vehicles.”

“Wolfspeed’s expanded SiC portfolio will make it possible for auto suppliers and manufacturers to develop the EV ecosystem of the future,” said Cengiz Balkas, general manager of Wolfspeed. “Our components enable smaller, lighter systems that deliver more miles per charge. This allows us to bridge the gap between EVs and gas vehicles on cost and performance.”

Wolfspeed Technology for EV Drivetrains

Wolfspeed’s new C3M™ 1200V SiC MOSFET technology can handle high current with what Cree claims to be the lowest switching losses and the industry’s lowest drain-source on resistance (RDS(on)) performance at 1200V. These performance enhancements translate to what the company says is the highest figure of merit available, thereby increasing the driving distance from a single charge.

Engineering samples of Wolfspeed’s newest generation 1200V SiC MOSFETs are available to select customers and the company has scheduled full distribution for later this year.

Wolfspeed plans to showcase its C3M 1200V SiC MOSFET and its expanded collection of SiC power products at its booth during PCIM Europe 2018 in Nuremberg, Germany from June 5-7. For more about how Wolfspeed’s electric vehicle innovations, visit: http://go.wolfspeed.com/evs.