Cree Introduces GaN HEMT to Broaden WiMAX Power Transistor Options

Durham, North Carolina USA– Cree, Inc. announced sample availability of its new 15-watt packaged gallium nitride (GaN) high electron mobility transistor (HEMT), the CGH35015, which is optimized for broadband wireless access and for WiMAX applications operating between 3.3 GHz and 3.9 GHz. GaN HEMTs offer higher linear power and enhanced efficiency performance over wider bandwidths than traditional technologies such as silicon LDMOS or GaAs.



The CGH35015 typically produces 2.5 watts of average output power and 20 percent drain efficiency over the frequency range of 3.3 to 3.9 GHz. It features 11 dB of small signal gain and 2 percent error vector magnitude (EVM) under orthogonal frequency-division multiplexing (OFDM) modulation when operated at 28 volts.



“The CGH35015 is the first in a series of packaged GaN products Cree plans to introduce this year for the broadband wireless access and WiMAX/WiBro markets,” said Jim Milligan, Cree’s manager for wide bandgap RF products. “GaN is well suited for applications that operate under high power conditions and that must meet high efficiency and stringent linearity requirements, like WiMAX and other applications that operate between 2 and 6 GHz.”



Additional information about the CGH35015 may be obtained by calling Cree at 919-287-7505 or visiting www.cree.com.



About WiMAX



WiMAX is a standards-based wireless technology that provides high- throughput connections over long distances. It can be used for multiple applications, including last mile broadband access, hotspots, cellular backhaul, high-speed enterprise connectivity, and non line-of-sight mobile connectivity.



About Cree, Inc.



Cree is a market-leading innovator and manufacturer of semiconductors and devices that enhance the value of solid-state lighting, power and communications products by significantly increasing their energy performance and efficiency. Key to Cree’s market advantage is its world-class materials expertise in silicon carbide (SiC) and gallium nitride (GaN) for chips and packaged devices that can handle more power in a smaller space while producing less heat than other available technologies, materials and products.



Cree drives its increased performance technology into multiple applications including exciting alternatives in brighter and more tunable light for general illumination, backlighting for more vivid displays, optimized power management for high-current switch-mode power supplies and variable speed motors, and more effective wireless infrastructure for data and voice communications. Cree customers range from innovative lighting-fixture makers to defense-related federal agencies.



Cree’s product families include blue and green LED chips, lighting LEDs, LED backlighting solutions, power-switching devices and radio- frequency/wireless devices. For additional product specifications please refer to www.cree.com.



This press release contains forward-looking statements involving risks and uncertainties, both known and unknown, that may cause actual results to differ materially from those indicated. Actual results may differ materially due to a number of factors, such as the risk we may encounter delays or other difficulties in ramping up production of our new products; the risk we may be unable to manufacture products with sufficiently low cost to offer them at competitive prices or with acceptable margins, the rapid development of new technology and competing products that may impair demand or render our products obsolete; the potential lack of customer acceptance for the products; variations in demand for Cree’s products and its customers’ products; and other factors discussed in Cree’s filings with the Securities and Exchange Commission, including its report on Form 10-K for the year ended June 26, 2005, and subsequent filings.