Cree, Inc. has added a new 20-A, all-SiC module to its silicon-carbide (SiC), 1.2-kV, six-pack power module family. Cree designed the module for 5–15-kW, three-phase applications based on the company’s C2M™ SiC MOSFET and Z-Rec® SiC Schottky diode technology. According to Cree, the six-pack module allows designers to produce devices with higher power density and efficiency while lowering cost compared to Si-based inverters in industrial power-conversion systems.
Cree says that the device’s zero turn-off tail current in the MOSFET and the zero reverse-recovery current in the Schottky diode give it the lowest switching losses available. The new Cree® 20-A six-pack module reportedly operates at a much lower junction temperature compared to similar Si IGBT modules, allowing high power density and high frequency without compromising efficiency.
Cummins, Inc., a electrical power-generation systems company, has tested and confirmed the capabilities of Cree’s all-SiC, 1.2-kV, six-pack power module family in their inverter platform.
“Cree’s new, 1.2-kV, all-SiC, six-pack module family will allow us to increase the power rating of our class-leading inverter by 40 percent while reducing power losses by 50 percent to increase efficiency by 5 percent,” said Brad Palmer, power electronics product line architect, Cummins, Inc. “This new power module is a significant technological advancement, capable of outperforming Si IGBT modules with four times the current rating. ”