Power Devices/Amplifiers

TriQuint Introduces New GaN MMIC Power Doublers for High Output CATV Infrastructure

TriQuint Semiconductor, Inc. of Hillsboro, Oregon USA, released its new gallium nitride (GaN) integrated power doubler for the CATV infrastructure. TriQuint’s new GaN MMIC amplifier offers high gain (24dB), and the company says it has excellent composite distortion performance (CTB/CSO), which is a critical characteristic in multi-carrier CATV environments. TriQuint …

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'LAST POWER' Project Reports Achievements

‘LAST POWER’, the EU program to develop reliable and economical power electronics, recently reported on the project’s achievements. The project was launched in 2010 through the European Nanoelectronics Initiative Advisory Council (ENIAC) Joint Undertaking (JU), which links private companies, universities and public research centers to study of wide bandgap semiconductors …

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IQE and II-VI Inc. Launch 150mm GaN HEMT Epi Wafers on SiC Substrates

IQE of Cardiff, UK announced the launch of gallium nitride based, high electron mobility transistor (GaN HEMT) epitaxial wafers on 150mm diameter semi-insulating silicon carbide (SiC) substrates. The SiC substrates are supplied by the WBG Materials subsidiary of II-VI Inc., a provider of optoelectronic components. IQE says that GaN power …

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M/A-COM Technology Solutions Announces New 500 W Power Transistor

M/A-COM Technology Solutions Inc. of Lowell, Massachusetts USA, has introduced a new GaN on SiC HEMT Power Transistor for L-Band pulsed radar applications. The MAGX-001214-500L00 is a gold-metalized pre-matched GaN on silicon carbide transistor optimized for pulsed L-Band radar applications. The MAGX-001214-500L00 provides 500 W of output power with 19 …

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Market for GaN and SiC Power Semiconductors to Rise By Factor of 18 from 2012 to 2022, According to IMS Research

IMS Research predicts that the market for Silicon Carbide (SiC) and Gallium Nitride (GaN) power semiconductors will grow to 18 times its current size during the next ten years fueled by demand from power supplies, photovoltaic (PV) inverters and industrial motor drives. Worldwide revenue from sales of SiC and GaN …

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Kyma Reports High Initial Device Reliability Results at 50,000W for GaN-based High Power Switch

Raleigh, North Carolina- based Kyma Technologies, Inc., a supplier of crystalline aluminum nitride (AlN) and gallium nitride (GaN) materials and related products and services, announced the completion initial device reliability testing of the recently launched KO-Switch™. It utilizes a specially tailored version of Kyma’s bulk semi-insulating GaN, KO-GaN. Kyma first …

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MagnaChip Introduces a Step-Down DC/DC Converter for Smartphone Power Amplifier Applications

MagnaChip Semiconductor Corporation, a Korea-based producer of analog and mixed-signal semiconductor products, has introduced a step-down DC/DC converter (model:MAP7153) designed to improve smartphone power amplifier performance and efficiency. MagnaChip says that the MAP7153 optimizes power efficiency and extends smartphone battery life by converting output voltage into bypass or high voltage …

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M/A-COM Technology Solutions Announces New X-Band Low Noise Amplifier for V-Sat, Radar, and Microwave Applications

Lowell, Massachusetts-based M/A-COM Technology Solutions Inc., a supplier of analog semiconductor solutions, announced an X-Band extension to its Low Noise Amplifier (LNA) family. The gallium arsenide MAAL-010528 MMIC is designed as a quick LNA solution for V-Sat, radar and microwave applications. This LNA boasts higher gain and linearity performance over …

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