Power Devices/Amplifiers

RFMD Introduces First 6-Inch GaN-on-SiC Wafers for RF Power Transistors

RFMD of Greensboro, North Carolina USA, introduced the first 6-inch GaN-on-Silicon Carbide (SiC) wafers for manufacturing RF power transistors for both military and commercial use. The company is converting all GaN production and development to 6-inch diameter wafers using its existing high-volume, 6-inch GaAs foundry to reduce platform cost for …

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GaN Transistor for Voltage Converter Achieves 98% Efficiency

Researchers of the Fraunhofer Institute for Applied Solid State Physics IAF have developed gallium nitride transistors to increase the efficiency of voltage converters and minimize heat losses. Efficient voltage converters can minimize losses and save energy during operation and the charging of batteries in electric cars. “We have increased the …

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Comtech Telecommunications Receives $1.9 Million Contract for High-Power Amplifiers

Comtech Telecommunications Corp. announced that its Melville, New York-based subsidiary, Comtech PST Corp., received a $1.9 million contract from an unnamed domestic OEM to provide solid-state high-power amplifiers. These amplifiers will serve as key components in a complex Identification Friend or Foe (IFF) system used to “interrogate” aircraft to determine …

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Hittite Launches 1W MMIC PA with Power Detector that Covers 37 to 40 GHz

Hittite Microwave Corporation has launched a new Power Amplifier which is for high linearity point-to-point and point-to-multi-point radios, VSAT and SATCOM applications. The HMC7229LS6 is a four-stage GaAs pHEMT MMIC Power Amplifier with an integrated temperature compensated on-chip Power Detector, which operates between 37 and 40 GHz. The power amplifier …

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Fujitsu Releases GaN Power Device on Silicon Substrate

Fujitsu Semiconductor Limited of Japan, released the MB51T008A, a silicon substrate-based, gallium-nitride (GaN) power device with a breakdown voltage of 150 V. Sample quantities will be made available starting in July 2013. The new HEMT (High Electron Mobility Transistor)-based device enables normally-off operations and is reportedly capable of achieving roughly …

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Northrop Grumman Corporation Releases GaN-based PA

Northrop Grumman Corporation of Redondo Beach, California USA has developed a new gallium nitride (GaN) flange packaged power amplifier (PA), APN180FP. The PA is aimed at military and commercial Ka-band satellite communication terminal and the commercial wireless infrastructure markets. According to the Northrop Grumman, the product is the company’s first …

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Cree Ships Over Two Million GaN HEMT Devices for Telecom Infrastructure

Durham, North Carolina-based Cree, Inc., reports it has shipped over two million GaN high electron mobility transistors (HEMT) for cellular telecommunications. Cree says that the GaN HEMTs offer benefits over traditional silicon-based technologies including: higher power, higher efficiency, and wider bandwidth. Telecommunications companies are looking to improve channel capacity and …

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