Power Devices/Amplifiers

About 25% of All High Power Semiconductors for Mobile Wireless Infrastructure in 2017 to be GaN, ABI Research Says

Gallium Nitride (GaN) RF power semiconductor components gained a significant market share over the previous two years, despite a tough 2016. Furthermore, ABI Research predicts that adoption of GaN RF power devices for wireless infrastructure will increase over 2017. The firm forecasts that GAN RF power devices will make up …

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Nexperia Releases Automotive Power MOSFETs

Nexperia, NXP’s former Standard Products division, announced the availability of its automotive power MOSFETs in the new, LFPAK33, thermally-enhanced, loss-free package. The package boasts a footprint more than 80 percent smaller than industry standard devices. Nexperia said it responded to industry pressure to reduce the size of modules in cars …

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U.S. Army Awards Contract to GE Aviation to Develop SiC Power Electronics for Next Generation Ground Electric Vehicles

GE Aviation of Dayton, Ohio USA, reported that the U.S. Army awarded the company a $4.1 million contract to develop and demonstrate silicon carbide-based power electronics for the high-voltage power architecture of next-generation electrical ground vehicles. “We continue to invest in silicon carbide and high-density packaging to help the U.S. …

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Misubishi Electric Introduces SiC Schottky-Barrier Diode

Mitsubishi Electric Corporation of Tokyo, Japan announced the launch of a silicon-carbide (SiC) Schottky-barrier diode (SiC-SBD) that incorporates a junction-barrier Schottky (JBS) structure. This junction-barrier Schottky structure helps reduce the power loss and size of power supply systems for air conditioners, photovoltaic power systems, and more. Mitsubishi Electric pointed out …

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Skyworks Launches Amplifiers for Small Cell Applications

Skyworks Solutions, Inc. introduced a suite of solutions aimed at small cell applications. Skyworks says that this new family of efficient amplifiers meets stringent power consumption and data rate specifications for both indoor and outdoor networks. Furthermore, the company pointed out that these devices support the most popular frequency bands …

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Navitas Semiconductor Introduces Half-Bridge GaN Power IC

Navitas Semiconductor based in El Segundo, California USA introduced what the firm claims to be the first integrated half-bridge Gallium Nitride (GaN) Power IC. Half-bridge circuits are power electronics building blocks employed in everything from electric vehicles, solar panels, and data centers to TVs, laptop adapters and smartphone chargers. The …

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Wolfspeed Releases 1200V SiC MOSFET

Wolfspeed a Cree company, introduced a 1200V, 75mΩ SiC MOSFET in its recently released low-inductance discrete packaging. The Mosfet expands Wolfspeeds C3M™platform. The firm says that in addition to enabling an increased frequency, the new device simplifies designs while lowering system cost, reducing circuit EMI, and enabling 99 percent efficiency …

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Qualcomm Launches Suite of RF Front-end Solutions

Qualcomm Incorporated reported that its subsidiary, Qualcomm Technologies, Inc. (QTI), introduced a suite of complete RF front-end (RFFE) solutions. The latest additions to the RF360™ family of RFFE products includes the firm’s first gallium arsenide (GaAs) power amplifier modules (QPA4360, QPA4361 QPA5460, and QPA5461). The new RF360™ products also include …

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