Power Devices/Amplifiers

Energous Introduces Near Field WattUp Wireless Charging Solution

Energous Corporation the creator of the WattUp®, an innovative wire-free charging solution that offers over-the-air power-at-a-distance, today announced the release of a new, high-power, Near Field WattUp charging solution. WattUp differs from older wireless charging technologies in that it can deliver contained power, at a distance, to multiple devices. The …

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NCSU Researchers Introduce PRESiCE™ SiC Manufacturing Process to Lower Cost for Entering SiC Power Device Market

North Carolina State University researchers are introducing a new manufacturing process and chip design for silicon carbide (SiC) power devices. The team developed the process called PRESiCE™ with support from Department of Energy’s the PowerAmerica Institute. The goal of the new process is to make entry into the SiC marketplace …

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ARPA-E Grants $30 Million for 21 Power Converter Projects

The U.S. Department of Energy’s Advanced Research Projects Agency-Energy (ARPA-E) announced $30 million in funding for 21 novel projects. The funding is part of the Creating Innovative and Reliable Circuits Using Inventive Topologies and Semiconductors (CIRCUITS) program. CIRCUITS project teams intend to expedite the development and deployment of unique electric …

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Pallidus Introduces M-SiC Material Platform

Pallidus, Inc. announced its proprietary M-SiC™ material and technology platform. According to Pallidus, its M-SiC technology can deliver cost/performance parity compared to silicon devices used in the power device market. Pallidus says that the ability to achieve cost/performance parity with silicon devices will increase market penetration by up to six …

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Fujitsu Lab Created GaN Power Amplifier Achieves Highest Output Density in W-band

Fujitsu Limited and Fujitsu Laboratories Ltd. reported the development of a gallium-nitride (GaN) high-electron mobility transistor (HEMT) power amplifier for W-band (75-110 GHz) transmissions. Fujitsu claims that this GaN HEMT PA achieved the world’s highest output density in the W-band of 4.5 watts per millimeter of gate width. The company also …

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