Power Devices/Amplifiers

GaN Systems to Present at IEEE Energy Conversion Congress and Exposition (ECCE) 2018

Canadian power semiconductor firm, GaN Systems, announced its participation at the 10th annual IEEE Energy Conversion Congress and Exposition (ECCE) 2018. At poster sessions of the IEEE Energy Conversion Congress and Exposition (ECCE) 2018, experts at GaN Systems will present to-date developments, solutions, and discussions about GaN power electronics. The …

Read More

X-Fab to Double 6-Inch SiC Process Capacity

X-FAB Silicon Foundries SE of Tessenderlo, Belgium, plans to double their 6-inch Silicon Carbide (SiC) process capacity at its Lubbock, Texas fab to meet increased demand for high-efficiency power semiconductors. X-FAB’s Lubbock, Texas manufacturing site is certified for automotive manufacturing according to the new IATF-16949:2016 International Automotive Quality Management System …

Read More

Agnitron Develops Gallium Oxide MOCVD

Agnitron Technology of Eden Prairie, Minnesota USA reported that the company has developed a new metal organic chemical vapor deposition (MOCVD) growth capability for growing beta-phase gallium oxide (β-Ga2O3) films with an order of magnitude improvement to background concentration levels. The company presented the new growth capability at the 2018 …

Read More

Fujitsu Effectively Triples Range of Weather Radar with GaN HEMT Improvement

Fujitsu Limited and Fujitsu Laboratories Ltd. reported that they have developed a crystal structure that both increases current and voltage in gallium-nitride (GaN) high electron mobility transistors (HEMTs). According to the companies, this performance improvement effectively triples the output power of transistors for microwave band transmitters. Fujitsu says that applying …

Read More

SUNY Poly Researcher Awarded $2,078,000 ARL Grant to Develop Ultra-High Voltage SiC Devices

SUNY Polytechnic Institute in Albany, New York USA, reported that the U.S. Army Research Laboratory (ARL) selected Associate Professor of Nanoengineering Dr. Woongje Sung to receive $2,078,000 in total to make advances in the project of Manufacturing of Ultra-high-voltage Silicon Carbide devices known as “MUSiC.” Dr. Sung will lead a …

Read More

Wolfspeed Introduces AEC-Q101 Qualified SiC Devices for Electric Vehicles and Solar Inverters

Wolfspeed, a Cree Company that produces silicon carbide (SiC) power products, introduced the E-Series™ family of robust SiC semiconductor devices for the Electric Vehicle (EV) and renewable energy markets. According to Wolfspeed, the E-Series provides the highest available power density and durability for on-board automotive power conversion systems and off-board …

Read More