Power Devices/Amplifiers

New 200V GaN Power Transistor from EPC

Efficient Power Conversion (EPC) of El Segundo, California, has launched a 200 V gallium nitride (GaN) power transistor. The company asserts that the GaN power transistor is one-twelfth the size of equivalently rated silicon MOSFETS. EPC created the EPC2046 GaN power transistor for AC-DC power supplies, wireless power, robotics, multi-level, …

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Alta Devices and Power Oasis Partner on Battery and Solar UAV Reference Design

Alta Devices of Sunnyvale, California USA and PowerOasis of Swindon, UK are partnering to develop a reference design to integrate solar and lithium-ion (Li-ion) battery power systems for small unmanned aerial vehicles (UAVs). According to the companies, the UAV reference design will combine the hybrid power systems expertise of Power …

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Rohm Releases 1200V SiC Power Modules

Kyoto-based firm Rohm announced the development of 1200V 400A/600A rated full SiC power modules (BSM400D12P3G002/ BSM600D12P3G001). Rohm optimized the SiC power modules for inverters and converters in power supplies for industrial equipment, solar power conditioners, and UPS. An optimized heat radiation design enables the BSM600D12P3G001 to achieve a rated current …

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Microsemi and ADI Create SiC Driver Reference Design

Microsemi Corporation of Aliso Viejo, California and Analog Devices, Inc. (ADI), of Norwood, Massachusetts announced a scalable Silicon Carbide (SiC) driver reference design solution. The reference design stemmed from the collaboration of the two companies as part of the Accelerate Ecosystem, a joint initiative designed to reduce time to market …

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Bel Power Solutions Power Supply Uses Transphorm’s GaN PFC Technology

Transphorm Inc. of Goleta, California USA, stated that the recently announced high-efficiency TET3000-12-069RA power supply from Bel Power Solutions uses its GaN PFC technology. In particular, the Bel Power Solutions power supply employs Transphorm’s GaN-based bridgeless totem-pole power factor correction (PFC) topology using Transphorm’s TPH3205WSB 49 milliOhm (mΩ) GaN FETs. …

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Wolfspeed Releases SiC Power Module

Wolfspeed, a Cree Company, which like Cree is also headquartered in Durham North Carolina USA, has released a SiC power module that passes the harsh environment qualification test. The test simultaneously puts the power module in high-humidity, high-temperature, and high-voltage conditions.  

According to Wolfspeed, this reliability benchmark enables system designers …

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New 1200V SiC JBS Diodes from ST Microelectronics

ST Microelectronics of Geneva, Switzerland has introduced a range of 2A-40A 1200V silicon carbide (SiC) JBS (Junction Barrier Schottky) diodes. The company claims that with its SiC technology, the new JBS diodes offer high switching efficiency, fast recovery, and consistent temperature characteristics.  The company also contends that its SiC-diode …

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Fraunhofer IAF to Supply Microwave Amplifiers for More Accurate Weather Satellite Measurements

Over the next few years, the European Space Agency (ESA) intends to launch a series of six new MetOp weather satellites  (Meteorological Operational Satellites) satellites to make more accurate meteorological measurements including precipitation, water vapor, and temperature. These measuring devices employ extremely sensitive microwave amplifiers developed at the Fraunhofer Institute …

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MACOM Launches Low Noise Wideband Amp

MACOM Technology Solutions Inc. of Lowell, Massachusetts USA, introduced the MAAL-011141-DIE.  MACOM’s MAAL-011141-DIE wideband low noise amplifier operates from DC to 28 GHz According to MACOM, the MAAL-011141-DIE offers low noise figure across the full frequency range. The company says that this low noise figure enables signal integrity for wideband …

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