Power Devices/Amplifiers

STMicroelectronics and Leti to Develop GaN-on-Silicon Technology for Power Conversion

STMicroelectronics, based in Geneva, Switzerland, and Leti, a research institute of CEA Tech, announced their cooperation to industrialize gallium nitride)-on-silicon (GaN-on-Si) technologies for power switching devices. ST says that this power GaN-on-Si technology will enable the company to address high-efficiency, high-power applications including automotive on-board chargers for hybrid and electric …

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Delta Electronics Uses Transphorm’s GaN FETs

Transphorm Inc.and Delta Electronics reported that the power supply unit (PSU) of Delta Electronics’ newest innovation comes from the use of Transphorm’s high-voltage (HV) GaN FETs. Delta’s latest 80Plus Platinum 800 Watt power supply unit now also offers a backup lithium-ion battery. So, in the case of a power outage …

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GaN Systems to Present at IEEE Energy Conversion Congress and Exposition (ECCE) 2018

Canadian power semiconductor firm, GaN Systems, announced its participation at the 10th annual IEEE Energy Conversion Congress and Exposition (ECCE) 2018. At poster sessions of the IEEE Energy Conversion Congress and Exposition (ECCE) 2018, experts at GaN Systems will present to-date developments, solutions, and discussions about GaN power electronics. The …

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X-Fab to Double 6-Inch SiC Process Capacity

X-FAB Silicon Foundries SE of Tessenderlo, Belgium, plans to double their 6-inch Silicon Carbide (SiC) process capacity at its Lubbock, Texas fab to meet increased demand for high-efficiency power semiconductors. X-FAB’s Lubbock, Texas manufacturing site is certified for automotive manufacturing according to the new IATF-16949:2016 International Automotive Quality Management System …

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Agnitron Develops Gallium Oxide MOCVD

Agnitron Technology of Eden Prairie, Minnesota USA reported that the company has developed a new metal organic chemical vapor deposition (MOCVD) growth capability for growing beta-phase gallium oxide (β-Ga2O3) films with an order of magnitude improvement to background concentration levels. The company presented the new growth capability at the 2018 …

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Fujitsu Effectively Triples Range of Weather Radar with GaN HEMT Improvement

Fujitsu Limited and Fujitsu Laboratories Ltd. reported that they have developed a crystal structure that both increases current and voltage in gallium-nitride (GaN) high electron mobility transistors (HEMTs). According to the companies, this performance improvement effectively triples the output power of transistors for microwave band transmitters. Fujitsu says that applying …

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SUNY Poly Researcher Awarded $2,078,000 ARL Grant to Develop Ultra-High Voltage SiC Devices

SUNY Polytechnic Institute in Albany, New York USA, reported that the U.S. Army Research Laboratory (ARL) selected Associate Professor of Nanoengineering Dr. Woongje Sung to receive $2,078,000 in total to make advances in the project of Manufacturing of Ultra-high-voltage Silicon Carbide devices known as “MUSiC.” Dr. Sung will lead a …

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