Power Devices/Amplifiers

The University of Tokyo and Mitsubishi Electric Showed New Method for Enhancing SiC Reliability

The University of Tokyo and Mitsubishi Electric Corporation reported having developed what they believe to be an all-new mechanism for improving the reliability of silicon carbide (SiC) power semiconductor devices. The researchers initially reported the achievement at The International Electron Devices Meeting (IEDM2018) in San Francisco, California on December 3 …

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Inergy Kodiak Extreme Portable Generator to Feature Transphorm’s GaN Technology

Transphorm Inc. along with solar energy innovator Inergy and design partner Telcodium Inc. announced that the upcoming Inergy Kodiak Extreme employs high-voltage GaN technology. The soon-to-be-released Kodiak Extreme portable electric generator from Inergy utilizes a photovoltaic (PV) inverter and battery charger integrating Transphorm’s JEDEC-qualified GaN platform. According to Transphorm, these …

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InnoScience Orders Multiple Aixtron MOCVD Systems to Ramp Production of GaN-on-Si Power Devices

Aixtron of Herzogenrath, Germany, reported that InnoScience Technology Co., Ltd ordered multiple AIX G5+ C MOCVD systems. The China-based company intends to use the systems to develop GaN (gallium nitride) power devices. Aixtron says all of the cluster tools will feature a 5×200 mm configuration. InnoScience plans to use the …

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ROHM’s New 1700V/250A Rated SiC Power Module Proves Reliable

ROHM recently reported the development of a 1700V/250A rated SiC power module. According to ROHM, the module boasts the industry’s highest level of reliability optimized for inverter and converter applications including industrial high power supplies and outdoor power generation systems. ROHM points out that power applications for electric vehicles and …

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ON Semiconductor Introduces IPMs for Electric Vehicles

ON Semiconductor introduced IPMs for electric and plugin hybrid electric vehicles.

ON Semiconductor of Phoenix, Arizona USA, launched new Automotive Intelligent Power Modules (IPMs) that enhance overall performance in high-voltage DC-DC conversion and onboard charging (OBC), and other applications for electric vehicles (EVs) and plug-in hybrid electric vehicles (PHEVs). IPMs Offer Very High Power Density The IPMs deliver extremely high power …

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GaN Systems to Showcase New Products and Design Tools at IEEE PEAC in Shenzhen

GaN Systems of Ottawa, Ontario, Canada, will showcase new products and design tools at the IEEE International Power Electronics and Application Conference and Exposition (PEAC), an international event related to power electronics, energy conversion, and applications in Shenzhen, China on Nov. 4-7, 2018. The company will also provide customer demonstrations, …

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New TI portfolio of ready-to-use, 600-V GaN FET power stages supports applications up to 10 kW

Backed by 20 million hours of device reliability testing, high-voltage GaN FET with integrated driver and protection doubles power density in industrial and telecom applications Dallas, Texas — Texas Instruments announced a new portfolio of ready-to-use, 600-V gallium nitride (GaN), 50-mΩ and 70-mΩ power stages to support applications up to 10 …

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STMicroelectronics and Leti to Develop GaN-on-Silicon Technology for Power Conversion

STMicroelectronics, based in Geneva, Switzerland, and Leti, a research institute of CEA Tech, announced their cooperation to industrialize gallium nitride)-on-silicon (GaN-on-Si) technologies for power switching devices. ST says that this power GaN-on-Si technology will enable the company to address high-efficiency, high-power applications including automotive on-board chargers for hybrid and electric …

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Delta Electronics Uses Transphorm’s GaN FETs

Transphorm Inc.and Delta Electronics reported that the power supply unit (PSU) of Delta Electronics’ newest innovation comes from the use of Transphorm’s high-voltage (HV) GaN FETs. Delta’s latest 80Plus Platinum 800 Watt power supply unit now also offers a backup lithium-ion battery. So, in the case of a power outage …

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