Power Devices/Amplifiers

Northrop Grumman MMICs Meet FCC’s 5G Frequency Allocations

At the International Microwave Symposium (IMS) 2017 last week, Northrop Grumman Corporation’s business, Microelectronics Products and Services (MPS) reported that its Monolithic Microwave Integrated Circuit (MMIC) products are aligned with the Federal Communications Commission’s (FCC) 5G frequency allocations. The company says that with the expanded 5G network frequencies, its technologies …

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Thales UK Creates GaN MMIC PA for MAGNUS Program

For the MAGNUS program, Thales UK, an aerospace, defense, and space industry company, created a GaN monolithic microwave integrated circuit (MMIC) power amplifier (PA). MAGNUS is a European Defence Agency project targeting the development of European-sourced application technologies for advanced radar, communications and electronic warfare systems for the electromagnetic (EM) …

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Skyworks Adds PAs Aimed at LAA and LTE-U Spectrum for Small Cell Base Stations

Skyworks Solutions, Inc. added new, high-efficiency power amplifiers targeting the License Assisted Access (LAA) and LTE unlicensed (LTE-U) spectrum for LTE-Advanced base stations. With the addition, the company expanded its portfolio of small cell solutions. To meet emerging requirements for the transition from 4G to 5G, wireless carriers and telecommunication manufacturers are …

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Qorvo Releases Four 28GHz RF Products for 5G Base Stations

Qorvo® of Greensboro, North Carolina USA, announced the broad commercial availability of four high-performance 28GHz RF products for 5G base stations. Qorvo RF products leverage its Gallium Nitride on Silicon Carbide (GaN-on-SiC) and Gallium Arsenide (GaAs) process technologies for state-of-the-art performance with smaller product footprints. Roger Hall, the general manager of …

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New 200V GaN Power Transistor from EPC

Efficient Power Conversion (EPC) of El Segundo, California, has launched a 200 V gallium nitride (GaN) power transistor. The company asserts that the GaN power transistor is one-twelfth the size of equivalently rated silicon MOSFETS. EPC created the EPC2046 GaN power transistor for AC-DC power supplies, wireless power, robotics, multi-level, …

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Alta Devices and Power Oasis Partner on Battery and Solar UAV Reference Design

Alta Devices of Sunnyvale, California USA and PowerOasis of Swindon, UK are partnering to develop a reference design to integrate solar and lithium-ion (Li-ion) battery power systems for small unmanned aerial vehicles (UAVs). According to the companies, the UAV reference design will combine the hybrid power systems expertise of Power …

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Rohm Releases 1200V SiC Power Modules

Kyoto-based firm Rohm announced the development of 1200V 400A/600A rated full SiC power modules (BSM400D12P3G002/ BSM600D12P3G001). Rohm optimized the SiC power modules for inverters and converters in power supplies for industrial equipment, solar power conditioners, and UPS. An optimized heat radiation design enables the BSM600D12P3G001 to achieve a rated current …

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Microsemi and ADI Create SiC Driver Reference Design

Microsemi Corporation of Aliso Viejo, California and Analog Devices, Inc. (ADI), of Norwood, Massachusetts announced a scalable Silicon Carbide (SiC) driver reference design solution. The reference design stemmed from the collaboration of the two companies as part of the Accelerate Ecosystem, a joint initiative designed to reduce time to market …

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Bel Power Solutions Power Supply Uses Transphorm’s GaN PFC Technology

Transphorm Inc. of Goleta, California USA, stated that the recently announced high-efficiency TET3000-12-069RA power supply from Bel Power Solutions uses its GaN PFC technology. In particular, the Bel Power Solutions power supply employs Transphorm’s GaN-based bridgeless totem-pole power factor correction (PFC) topology using Transphorm’s TPH3205WSB 49 milliOhm (mΩ) GaN FETs. …

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