Power Devices/Amplifiers

ALLOS Semiconductors Establishes GaN-on-Si Growth Processes on Customer’s Aixtron and Veeco Reactors

ALLOS Semiconductors of Dresden, Germany reported that it established the firm’s epiwafer growth processes using a customer’s Aixtron G5 and Veeco K465i reactors. Therefore, in addition to providing the desired gallium nitride on silicon (GaN-on-Si) epiwafers, the project gave the company a unique performance and cost comparison between Aixtron’s G5 …

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Navitas Releasez GaN Power ICs

Navitas Semiconductor of El Segundo, California USA announced the availability of its production qualified iDrive™ Gallium Nitride (GaN) Power ICs. The new Power ICs use the company’s proprietary AllGaN™ technology. The NV6131, NV6105 & NV6115 boast a high-efficiency 650V, 160mOhm power FET with increased integration of digital and analog circuits, …

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GaN Systems Publishes White Paper for Using the RC Thermal Spice Model to Predict Thermal Behavior of its GaNPX Product

GaN Systems of Ottawa, Ontario Canada, reports that the number of its customers designing and deploying power systems using the company’s GaN transistors has surged. According to the firm, the increased adoption of its GaN transistors is because customers have recognized that GaN devices significantly improve both power efficiency and …

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Wolfspeed Adds Four SiC Schottky Diodes to Portfolio

Wolfspeed, A Cree Company, a leading global supplier of silicon carbide (SiC) power products — including best in class SiC MOSFETs, Schottky diodes, and modules — has added four new SiC Schottky diodes to its portfolio, further extending what was already recognized as the industry’s most comprehensive offering. Developed in …

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Wolfspeed Launches 900V SiC MOSFET

Wolfspeed, a Cree Company, has introduced a silicon carbide (SiC) 900V, 10mΩ MOSFET rated for 196 A of continuous drain current at a case temperature of 25˚C. According to Cree, the MOSFET can reduce of EV drive-train inverter losses by up to 78 percent based on EPA’s combined city/highway mileage …

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Millitech Launches E-Band and W-Band GaN PAs

Millitech, a microwave brand of Smiths Interconnect based in Northampton, Massachusetts, has released new Gallium Nitride (GaN) based power amplifiers (PAs). According to Millitech, the new PAs have superior output power and power-added efficiency (PAE) at E-Band and W-Band. They provide up to 2.5 Watts of output power and up …

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EPC and JJPlus Collaborate on GaN-based Wireless Power Solutions

JJPlus Corporation and Efficient Power Conversion Corporation have announced their collaboration to create GaN-based wireless power solutions. The companies intend to address the recently announced Taiwan wireless power standards organization’s adoption of AirFuel™ Alliance’s resonant wireless charging standard. In addition to the Taiwan effort, the companies plan to use these …

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