Power Devices/Amplifiers

Baylin Technologies Releases 600W GaN SSPA/BUC

Baylin Technologies Inc. based in Toronto, Canada, reported that its subsidiary, Advantech Wireless Technologies Inc., (Advantech), released its new generation 600W C-Band Gallium Nitride (GaN) technology. The company created the new GaN Solid State Amplifier (SSPA)/Block-Up-Converter (BUC) for ultra HD 4K/8K broadcasting applications. Mr. Cristi Damian, VP business development at Advantech …

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Lockheed Martin Delivers Multi-Role Radar Systems to Latvian Ministry of Defense

Lockheed Martin of Bethesda, Maryland USA, recently completed a successful site acceptance test of a TPS-77 Multi-Role Radar (TPS-77 MRR). The site acceptance testing marks the on-time delivery of the first of three radar systems to the Ministry of Defense of the Republic of Latvia. The TPS-77 MRR, the latest …

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Cree’s Wolfspeed Business Acquires Infineon RF Power Bussiness Assets

Cree’s Wolfspeed business has acquired the Radio Frequency (RF) Power Business assets of German company Infineon Technologies AG for about € 345 million. The deal extends Cree’s Wolfspeed business unit’s wireless market opportunity. Infineon continues to encourage key growth sectors including renewables, electro-mobility, autonomous driving, and technologies for a connected …

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Microchip Technology to Acquire Microsemi

Microchip Technology Incorporated of Chandler, Arizona, a supplier of microcontroller, mixed-signal, analog and Flash-IP solutions and Microsemi Corporation of Aliso Vieojo, California, a provider of semiconductor solutions have signed a definitive agreement under which Microchip will acquire all of Microsemi’s stock for about $8.35 billion or $68.78 per share in cash. …

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Microsemi Samples First of its 1200V SiC MOSFETs and Releases Complimentary 1200V SiC Schottky barrier diodes (SBDs)

Microsemi Corporation based in Aliso, Viejo, California USA, announced sampling availability of the first product among its next-generation 1200-volt (V) Silicon Carbide (SiC) MOSFETs, the 40 mOhm MSC040SMA120B. The company also released its complementary 1200 V SiC Schottky barrier diodes (SBDs), further expanding its portfolio of SiC discrete and module …

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Navitas to Demonstrate GaN Technology at APEC

Navitas Semiconductor based in El Segundo, California USA, will demonstrate its GaN power IC technology at the Applied Power Electronics Conference (APEC) on March 4-8 in San Antonio, Texas at the Henry B. Gonzalez Convention Center. As a ‘Diamond’ APEC sponsor, Navitas will show both its own GaN (Gallium Nitride) …

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SPTS Gets Orders for Multiple Etch and Deposition Systems From GaAs Foundry Customers

SPTS Technologies, an Orbotech company based in Yavne, Israel, received about $37M in orders for multiple etch and deposition systems from two GaAs foundry customers. The customers who ordered the Omega® plasma etch, Delta® PECVD, and Sigma® PVD systems intend to use them to fabricate 4G and emerging 5G radio frequency …

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