Power Devices/Amplifiers

WIN Semiconductor Releases New GaAs pHEMT Technology

WIN Semiconductors Corp of Taoyuan, Taiwan, a pure-play compound semiconductor foundry, has released a new GaAs pHEMT technology which incorporates monolithic PIN and vertical Schottky diodes with WIN’s high performance 0.1µm pseudomorphic HEMT process, PP10. According to the company, this integrated platform, PIH0-03, adds a highly linear vertical Schottky diode …

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NXP Releases GaN RF Power Products for 5G

At the IEEE International Microwave Symposium (IMS 2018) in Philadelphia, Pennsylvania, USA (12-15 June), NXP Semiconductors N.V. of Eindhoven, the Netherlands introduced new products for macro and outdoor small-cell 5G cellular networks including RF gallium nitride (GaN) wideband power transistors. NXP Predicts Future 5G Networks will Depend on GaN and …

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Littlefuse Introduces New 1200V SiC Schottky Diodes

Littelfuse, Inc. added 1200V Schottky Diodes to its portfolio of silicon carbide (SiC) power semiconductor devices. Specifically, the company introduced five new GEN2 Series 1200 V, 3L TO-247 Schottky Diodes and three GEN2 Series 1200 V, 2L TO-263 Schottky Diodes. The company says that when compared with silicon devices, GEN2 …

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Cree Launches New 1200V SiC MOSFET for EV Drivetrains

Wolfspeed, a Cree Company, reported a performance breakthrough in the ability to power the electric vehicle drivetrains using its new third-generation 1200V SiC MOSFET family. The company claims that this new switching device, which enables high-voltage power conversion, brings increased efficiency to EV drivetrains. At the same time, Cree says …

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EPC Releases Class 4 Wireless Power Kit

Efficient Power Conversion Corporation (EPC) of El Segundo, California USA, made available a complete class 4 wireless power kit, the EPC9129. The company intends the demonstration kit to simplify the evaluation of using eGaN FETs for highly efficient wireless power transfer. According to EPC, the system can transmit up to …

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EPC Appoints Spirit Electronics Distribution Partner

Efficient Power Conversion Corporation (EPC) of El Segundo, California announced the appointment of Spirit Electronics as a distribution partner focusing on defense, aerospace, and telecommunications. EPC produces field effect transistors (FETs) fabricated with gallium-nitride-on-silicon using technology that the company calls eGaN. Spirit Electronics Supplies Products and Services for U.S. DoD, …

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Baylin Technologies Releases 600W GaN SSPA/BUC

Baylin Technologies Inc. based in Toronto, Canada, reported that its subsidiary, Advantech Wireless Technologies Inc., (Advantech), released its new generation 600W C-Band Gallium Nitride (GaN) technology. The company created the new GaN Solid State Amplifier (SSPA)/Block-Up-Converter (BUC) for ultra HD 4K/8K broadcasting applications. Mr. Cristi Damian, VP business development at Advantech …

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