RF Communications

Custom MMIC Launches Line of GaAs Digital Step Attenuators (DSA)

Custom MMIC of Chelmsford, Massachusetts, a developer of monolithic microwave integrated circuits (MMICs), has introduced a new product line of GaAs Digital Step Attenuators (DSA). The company intends the DSA family to facilitate the design of high dynamic range receivers and instrumentation. Notably, these applications often must achieve gain control of …

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Skyworks Solutions, Inc. of Irvine, California USA, revealed the latest products from its 5G enabling platform Sky5™. Skyworks designed the company’s extraordinarily compact wideband 16-state antenna aperture tuners to improve efficiency and enhance bandwidth coverage from 600 MHz to 6 GHz for LTE Advanced Pro to emerging 5G standards, across …

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Advantech receives One Million Dollar Order from Military Customer

Baylin Technologies Inc. reported that a military customer ordered its GaN-based satellite communication (SATCOM) block up converters (BUCs) from Advantech Wireless Technologies Inc. its Dorval, Quebec subsidiary. “Our customers appreciate the exceptional linearity and operating efficiency our products offer. The GaN X-band line of solid state power amplifiers (SSPAs) is extremely versatile …

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NTT and Tokyo Institute of Technology Develop IC Capable of Wireless transmission of 100 gigabits per second in a 300 GHz band

Nippon Telegraph and Telephone Corporation (NTT), and Tokyo Institute of Technology, have succeeded in creating the world’s fastest 100 gigabit per second wireless transmission data rate in the 300 GHz band. They jointly developed the ultra high-speed wireless front-end IC that operates on a terahertz frequency band used to achieve …

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NXP Releases GaN RF Power Products for 5G

At the IEEE International Microwave Symposium (IMS 2018) in Philadelphia, Pennsylvania, USA (12-15 June), NXP Semiconductors N.V. of Eindhoven, the Netherlands introduced new products for macro and outdoor small-cell 5G cellular networks including RF gallium nitride (GaN) wideband power transistors. NXP Predicts Future 5G Networks will Depend on GaN and …

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Win Semiconductor Expands GaN Processes to Include 0.45m-gate Technology for 5G

WIN Semiconductors Corp, a pure-play compound semiconductor foundry, expanded its gallium nitride (GaN) process capabilities to include a 0.45m-gate technology supporting current and future 5G applications. The firm says its NP45-11 GaN-on-SiC process lets customers design hybrid Doherty power amplifiers for 5G applications such as massive MIMO (multiple-input and multiple-output) …

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Custom MMIC Launches GaAs and GaN Solutions at IMS 2018

At IMS 2018, Circuits (MMICs) based in Westford, Massachusetts USA, announced the Ultra Low Noise Amplifier (ULNA) MMIC. The CMD283C3 touts an unbelievable 0.6 dB noise figure, beating all other LNA MMICs, and challenging discrete component solutions. The ULNA MMIC operates over a frequency range of 2 GHz to 6 …

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