RF Communications

NTT and Tokyo Institute of Technology Develop IC Capable of Wireless transmission of 100 gigabits per second in a 300 GHz band

Nippon Telegraph and Telephone Corporation (NTT), and Tokyo Institute of Technology, have succeeded in creating the world’s fastest 100 gigabit per second wireless transmission data rate in the 300 GHz band. They jointly developed the ultra high-speed wireless front-end IC that operates on a terahertz frequency band used to achieve …

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NXP Releases GaN RF Power Products for 5G

At the IEEE International Microwave Symposium (IMS 2018) in Philadelphia, Pennsylvania, USA (12-15 June), NXP Semiconductors N.V. of Eindhoven, the Netherlands introduced new products for macro and outdoor small-cell 5G cellular networks including RF gallium nitride (GaN) wideband power transistors. NXP Predicts Future 5G Networks will Depend on GaN and …

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Win Semiconductor Expands GaN Processes to Include 0.45m-gate Technology for 5G

WIN Semiconductors Corp, a pure-play compound semiconductor foundry, expanded its gallium nitride (GaN) process capabilities to include a 0.45m-gate technology supporting current and future 5G applications. The firm says its NP45-11 GaN-on-SiC process lets customers design hybrid Doherty power amplifiers for 5G applications such as massive MIMO (multiple-input and multiple-output) …

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Custom MMIC Launches GaAs and GaN Solutions at IMS 2018

At IMS 2018, Circuits (MMICs) based in Westford, Massachusetts USA, announced the Ultra Low Noise Amplifier (ULNA) MMIC. The CMD283C3 touts an unbelievable 0.6 dB noise figure, beating all other LNA MMICs, and challenging discrete component solutions. The ULNA MMIC operates over a frequency range of 2 GHz to 6 …

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Integra Technologies Introduces 135-Watt and 130-Watt GaN-on-Si HEMTs

Integra Technologies Inc. of El Segundo, California USA, introduced a pair of 135- and a 130-Watt gallium-nitride-on-silicon-carbide (GaN-on-SiC) RF and microwave transistors for S-band radar applications. The IGT2731M130 is a 50-Ohm matched high-power GaN high-electron-mobility-transistor (HEMT). It provides a minimum of 130 Watts of peak pulsed power. With a gain …

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INEX Microtechnology Chooses Keysight Advanced Design System Automation Software to Deliver GaN Process Design Kit

INEX Microtechnology Limited of Newcastle-upon-Tyne, UK, a maker of semiconductor and MEMS devices, selected Keysight’s Advanced Design System (ADS) electronic design automation software to provide the company’s Gallium Nitride (GaN) Process Design Kit (PDK). INEX Microtechnology Ltd provides micro- and nano-fabrication services to emerging technology supply chains internationally. The company …

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Mission Microwave and Sat-Lite Demonstrate Uplink with GaN-based BUC for Satellite News Gathering Vehicles

Mission Microwave Technologies, LLC of Las Vegas, Nevada USA, has partnered with Sat-Lite Technologies, LLC, to introduce a compact vehicular mount antenna package with an integrated GaN-based lightweight, redundant high power Ku-Band block upconverter (BUC). The companies designed the combined antenna and BUC package for optimal Size, Weight, and Power (SwaP). …

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Integra Technologies Releases GaN-based VSWR pallet amplifier

Integra Technologies of El Segundo, California USA,  a provider of high-power RF and microwave transistors and amplifiers is now offering a high-efficiency, low input/output Voltage Standing Wave Radio(VSWR) pallet amplifier. The GaN-based IGNP1214M1KW-GPS operates in the 1.20 – 1.40 GHz instantaneous frequency band as a single-supply 50 Ohm matched GaN-based pulsed …

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