RF Communications

Bluetooth Switch Reference Design from ON Semiconductor Uses Only Harvested Energy

Phoenix, Arizona-based firm ON Semiconductor, introduced its Bluetooth Low Energy Switch reference design that operates entirely from harvested energy. The platform demonstrates how the RSL10 System-in-Package (SIP) can enable Bluetooth 5 devices that are battery-less and entirely self-powered. Potential applications include lighting control, building automation, and asset tracking. The Energy Harvesting …

Read More

II-VI Inc. and Sumitomo Collaborate on GaN-on-SiC

II‐VI Incorporated,a compound semiconductor solution provider, reported that the company began a strategic collaboration with Sumitomo Electric Device Innovations, Inc., (SEDI) a subsidiary of Sumitomo Electric Industries, Ltd. The collaboration aims to establish a vertically integrated, 150 mm wafer fabrication platform for producing gallium nitride (GaN) on silicon carbide (SiC) …

Read More

Custom MMIC Launches Line of GaAs Digital Step Attenuators (DSA)

Custom MMIC of Chelmsford, Massachusetts, a developer of monolithic microwave integrated circuits (MMICs), has introduced a new product line of GaAs Digital Step Attenuators (DSA). The company intends the DSA family to facilitate the design of high dynamic range receivers and instrumentation. Notably, these applications often must achieve gain control of …

Read More

Skyworks Solutions, Inc. of Irvine, California USA, revealed the latest products from its 5G enabling platform Sky5™. Skyworks designed the company’s extraordinarily compact wideband 16-state antenna aperture tuners to improve efficiency and enhance bandwidth coverage from 600 MHz to 6 GHz for LTE Advanced Pro to emerging 5G standards, across …

Read More

Advantech receives One Million Dollar Order from Military Customer

Baylin Technologies Inc. reported that a military customer ordered its GaN-based satellite communication (SATCOM) block up converters (BUCs) from Advantech Wireless Technologies Inc. its Dorval, Quebec subsidiary. “Our customers appreciate the exceptional linearity and operating efficiency our products offer. The GaN X-band line of solid state power amplifiers (SSPAs) is extremely versatile …

Read More

NTT and Tokyo Institute of Technology Develop IC Capable of Wireless transmission of 100 gigabits per second in a 300 GHz band

Nippon Telegraph and Telephone Corporation (NTT), and Tokyo Institute of Technology, have succeeded in creating the world’s fastest 100 gigabit per second wireless transmission data rate in the 300 GHz band. They jointly developed the ultra high-speed wireless front-end IC that operates on a terahertz frequency band used to achieve …

Read More

NXP Releases GaN RF Power Products for 5G

At the IEEE International Microwave Symposium (IMS 2018) in Philadelphia, Pennsylvania, USA (12-15 June), NXP Semiconductors N.V. of Eindhoven, the Netherlands introduced new products for macro and outdoor small-cell 5G cellular networks including RF gallium nitride (GaN) wideband power transistors. NXP Predicts Future 5G Networks will Depend on GaN and …

Read More