RF Communications

Aixtron Delivers CRIUS MOCVD System to SEDI

The German firm, Aixtron SE reported that the company shipped a CRIUS MOCVD system with 4-inch wafer configuration to Sumitomo Electric Device Innovations, Inc. (SEDI) of Japan.SEDI intends to use the system to boost production of GaN-on-SiC (gallium nitride on silicon carbide) devices for RF data transfer applications such as …

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SMT Packaged Millimeterwave Switch for 5G from MACOM

MACOM Technology Solutions Inc. of Lowell, Massachusetts USA, added an SMT Packaged Millimeterwave Switch to its selection of components and integrated modules for 5G wireless infrastructure. MACOM designed the new SMT packaged MASW-011098 millimeterwave (mmW) switch, which is suited for 28GHz, 37GHz and 39GHz frequency bands, to meet the bandwidth …

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Qualcomm Launches Suite of RF Front-end Solutions

Qualcomm Incorporated reported that its subsidiary, Qualcomm Technologies, Inc. (QTI), introduced a suite of complete RF front-end (RFFE) solutions. The latest additions to the RF360™ family of RFFE products includes the firm’s first gallium arsenide (GaAs) power amplifier modules (QPA4360, QPA4361 QPA5460, and QPA5461). The new RF360™ products also include …

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Qorvo Introduces RF Front Ends for LTE Power Class 2

Qorvo of Greensboro, North Carolina launched a portfolio of RF front ends for LTE Power Class 2. LTE Power Class 2 is also known as high-performance user equipment (HPUE). According to Qorvo, smartphones incorporating its RF front ends can combine the coverage advantages of mid-band spectrum and the capacity and …

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TRAK Microwave’s New HPT Functions as Satcon Solution

TRAK Microwave of Tampa, Florida USA, has introduced a new high power transceiver (HPT) that functions as a complete airborne Satcom solution. According to TRAK, the HPT integrates the required GaN SSPA, along with upconverters, downconverters, and digital controls. The company contends that the new HPT offers a highly modular …

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Mitsubishi Electric to Demonstrate GaN Doherty Amplifier

At Radio & Wireless Week, Jan. 16-17, 2017 in Phoenix, Arizona, Mitsubishi Electric US, Inc. will showcase a hands-on mini lab that demonstrates the firm’s high-efficiency, GaN Doherty Amplifier. The company will also present a paper describing the technique for designing with this wide-band Doherty power amplifier for use in …

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University of Illinois Researchers Develop Potentially Scalable Process for Fabricating GaN-on-Si HEMTs

Researchers from the University of Illinois recently advanced gallium nitride (GaN)-on-silicon transistor technology. They reportedly optimized the composition of the device’s semiconductor layers. Working with industry partners IBM and Veeco, the team formed the high electron mobility transistor (HEMT) structure on a 200 mm silicon substrate using a process that …

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