Opto/RF Communications

WIN Semiconductor Releases New GaAs pHEMT Technology

WIN Semiconductors Corp of Taoyuan, Taiwan, a pure-play compound semiconductor foundry, has released a new GaAs pHEMT technology which incorporates monolithic PIN and vertical Schottky diodes with WIN’s high performance 0.1µm pseudomorphic HEMT process, PP10. According to the company, this integrated platform, PIH0-03, adds a highly linear vertical Schottky diode …

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NTT and Tokyo Institute of Technology Develop IC Capable of Wireless transmission of 100 gigabits per second in a 300 GHz band

Nippon Telegraph and Telephone Corporation (NTT), and Tokyo Institute of Technology, have succeeded in creating the world’s fastest 100 gigabit per second wireless transmission data rate in the 300 GHz band. They jointly developed the ultra high-speed wireless front-end IC that operates on a terahertz frequency band used to achieve …

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NXP Releases GaN RF Power Products for 5G

At the IEEE International Microwave Symposium (IMS 2018) in Philadelphia, Pennsylvania, USA (12-15 June), NXP Semiconductors N.V. of Eindhoven, the Netherlands introduced new products for macro and outdoor small-cell 5G cellular networks including RF gallium nitride (GaN) wideband power transistors. NXP Predicts Future 5G Networks will Depend on GaN and …

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Win Semiconductor Expands GaN Processes to Include 0.45m-gate Technology for 5G

WIN Semiconductors Corp, a pure-play compound semiconductor foundry, expanded its gallium nitride (GaN) process capabilities to include a 0.45m-gate technology supporting current and future 5G applications. The firm says its NP45-11 GaN-on-SiC process lets customers design hybrid Doherty power amplifiers for 5G applications such as massive MIMO (multiple-input and multiple-output) …

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Custom MMIC Launches GaAs and GaN Solutions at IMS 2018

At IMS 2018, Circuits (MMICs) based in Westford, Massachusetts USA, announced the Ultra Low Noise Amplifier (ULNA) MMIC. The CMD283C3 touts an unbelievable 0.6 dB noise figure, beating all other LNA MMICs, and challenging discrete component solutions. The ULNA MMIC operates over a frequency range of 2 GHz to 6 …

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Integra Technologies Introduces 135-Watt and 130-Watt GaN-on-Si HEMTs

Integra Technologies Inc. of El Segundo, California USA, introduced a pair of 135- and a 130-Watt gallium-nitride-on-silicon-carbide (GaN-on-SiC) RF and microwave transistors for S-band radar applications. The IGT2731M130 is a 50-Ohm matched high-power GaN high-electron-mobility-transistor (HEMT). It provides a minimum of 130 Watts of peak pulsed power. With a gain …

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