nitrides

GaN Systems Launches 60A GaN Power Transistor

GaN Systems Inc., added to its range of E-mode GaN-on-Silicon high power transistors based on its three core proprietary technologies.  The company’s new GaN high-power enhancement-mode device, designated the GS65516T, boasts the highest current available at 60A. The GS65516T 650V E-mode power switch features GaN Systems’ new proprietary topside cooling configuration …

Read More

TriQuint, Nitronex, and sp3 to Develop GaN on Silicon-on-Diamond Substrates

TriQuint, a compound semiconductor company focused on radar development, and Nitronex a specialist in growing gallium nitride (GaN) on silicon, will collaborate with sp3 as part of Phase II of a Small Business Innovative Research grant from the US Missile Defense Agency. Sp3 Diamond Technologies has reportedly won a Phase …

Read More

Swiss Researchers Report High Quality Thin GaN HVPE on Saphire Without MOCVD Step

Researchers at the Laboratory of Advance Semiconductors for Photonic and Electronics in Lusanne, Switzerland, report demonstrating growth of high quality gallium nitride (GaN) templates on sapphire substrates using hydride vapor phase epitaxy (HVPE). They were able to eliminate the costly MOCVD growth step typically used in HVPE deposition. According to …

Read More

Matsushita Electric Develops Gallium Nitride Vertical Transistor

Panasonic, the brand by which Matsushita Electric Industrial Co., Ltd. is generally known, announced the development of a Gallium Nitride (GaN) transistor with vertical structure which dramatically reduces the chip size comparing with the conventional planar structure. This is the first demonstration of GaN vertical transistor applicable to high power …

Read More

Matsushita Develops GaN Vertical Transistor for High-Power Switching

Matsushita Electric (commonly known as Panasonic) has reported developing a gallium nitride (GaN) transistor with a vertical structure for high-power switching devices. According to the company, the unique design dramatically reduces the chip area by about one-eighth of conventional planar devices. Panasonic also contends that the transistor successfully suppresses current …

Read More