Starting Substrates/Wafers incl LED Materials – CS/SSLnet

Cambridge University Orders Veeco’s Propel™ Power Gallium Nitride MOCVD System for Research in GaN-on-Si

Veeco Instruments of Plainview, New York USA, reports that the University of Cambridge has ordered Veeco’s Propel™ Power Gallium Nitride (GaN) metal organic chemical vapor deposition (MOCVD) System for GaN-on-silicon power electronics and LED research and development. The system will be installed at the Cambridge Centre for Gallium Nitride headed …

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RFMD Introduces First 6-Inch GaN-on-SiC Wafers for RF Power Transistors

RFMD of Greensboro, North Carolina USA, introduced the first 6-inch GaN-on-Silicon Carbide (SiC) wafers for manufacturing RF power transistors for both military and commercial use. The company is converting all GaN production and development to 6-inch diameter wafers using its existing high-volume, 6-inch GaAs foundry to reduce platform cost for …

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Air Water to Develop GaN-on-SiC-on-Si with Aixtron System

Aixtron SE of Aachen, Germany announced that Air Water Inc. of Azumino, Japan reported successful installation of a fully automated AIX G5 HT Planetary Reactor. The reactor is in a 8×6-inch configuration for the growth of GaN epitaxial layers. Air Water is a Japanese industrial gas manufacturer and developer of …

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Strategy Analytics Predicts GaAs Bulk Substrate Market Drop in 2012

Strategy Analytics (“SA”) reports demand for semi-insulating GaAs bulk substrates has declined because of slow growth in the gallium arsenide (GaAs) device market in 2012, combined with new developments and competitive technologies in cellular power amplifiers. Additionally, SA says that wafer pricing is returning to normal levels after a pricing …

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Kyma Announces Commercial Availability of 2-inch N-type GaN Substrates

Kyma Technologies, Inc. announced the commercial availability of 2-inch diameter n-type c-plane GaN substrates. Kyma has produced free-standing gallium nitride products in form factors including c-plane substrate form factors of 10mm squares, 18mm squares, and 30mm diameter rounds, and rectangular non-polar and semi-polar substrates of 5mm x 10mm and larger. …

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Element Six Acquires the Assets and Intellectual Property of Group4 Labs

Element Six of Santa Clara, California, a maker of synthetic diamond supermaterials announced it has acquired the assets and intellectual property of Group4 Labs, Inc. (Group4). Group4 manufactures Gallium Nitride (GaN) on-diamond semiconductor technology for RF and high-power devices. Element Six says that the asset acquisition will expand its semiconductor …

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IQE and II-VI Inc. Launch 150mm GaN HEMT Epi Wafers on SiC Substrates

IQE of Cardiff, UK announced the launch of gallium nitride based, high electron mobility transistor (GaN HEMT) epitaxial wafers on 150mm diameter semi-insulating silicon carbide (SiC) substrates. The SiC substrates are supplied by the WBG Materials subsidiary of II-VI Inc., a provider of optoelectronic components. IQE says that GaN power …

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TriQuint Produces GaN HEMTs Using GaN-on-Diamond Wafers

TriQuint Semiconductor, Inc. of Hillsboro, Oregon USA, announced the production of gallium nitride (GaN) high electron mobility transistors (HEMTs) using GaN-on-diamond wafers. The GaN-on-diamond wafers substantially reduce semiconductor temperatures while maintaining high RF performance. TriQuint successfully transfered a semiconductor epitaxial overlay onto a synthetic diamond substrate. This provides high thermal …

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