Crystals & Boules

Raytheon Led Team Demonstrates CS on Silicon Growth Technique

A team of researchers led by Raytheon based in Tewksbury, Massachusetts USA, reported the successful demonstration of growing semiconductor compounds directly on silicon. The demonstration of the novel technique is part of a $6.5 million contract awarded by the Office of Naval Research and funded through the Defense Advanced Research …

Read More

Dow Corning Compound Semiconductor Solutions Wins Additional U.S. Navy Funds for Semiconductor Silicon Carbide Development

Money To Help Mature New Semiconductor Materials Technology Midland, Michigan USA — Dow Corning Compound Semiconductor Solutions (DCCSS) has been awarded a $4.2 million contract from the U.S. Office of Naval Research to develop semiconductor silicon carbide (SiC) materials technology. The contract follows a previous $3.6 million contract awarded in …

Read More

Dow Corning Division Gets Continuation of SiC Substrate Development Contract

The U.S. Office of Naval Research has awarded Dow Corning Compound Semiconductor Solutions (DCCSC) $4.2 million to develop semiconductor silicon carbide (SiC) materials technology. The contract is a continuation of the $3.6 million contract awarded to the company in December 2005. The new contract will allow the company to continue …

Read More

Arrowhead Subsidiary, Aonex, Demonstrates High Quality GaN Growth on its Proprietary A-GaN Substrates Which Target the GaN Laser Diode and LED Device Markets

Pasadenda, California USA–Arrowhead Research Corporation (NASDAQ: ARWR) announced today that its majority-owned subsidiary, Aonex Technologies, Inc. and partner Sandia National Laboratories have successfully demonstrated the growth of high-quality gallium nitride on Aonex’s proprietary A-GaN

Read More

TDI Introduces Nonpolar GaN on Sapphire

Technologies and Devices International Inc. (TDI) of Silver Spring, Maryland USA, demonstrated a new product prototype of 2-inch nonpolar a-plane GaN substrates. The nonpolar 2-inch a-plane GaN on (r-plane oriented) sapphire substrates will be featured at 7th International Conference on Nitride Semiconductors in Las Vegas, from September 17 through September …

Read More