MOCVD/MBE Related and Other Processing Equipment – CS/SSLnet

IBM Researchers Develop Process to Integrate III-V Materials with Si

IBM has developed a new process to integrate nanoscale III-V materials with Si. IBM and the researchers call the newly developed process template-assisted selective epitaxy (TASE). The process employs conventional metal organic chemical vapor deposition (MOCVD). The group detailed their process in a paper in Applied Physics Letters. The researchers …

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New Picosun Fast P-200 Batch ALD Tool Designed for Fabrication of LEDs and MEMs

Picosun Oy of Finland, an (ALD) equipment manufacturer, announced the launch of the new Picosun P-200 batch ALD system. The P-200 ALD tool is specifically optimized for fast and efficient manufacturing of MEMS (MicroElectroMechanical Systems, e.g. sensors and actuators), LEDs, and power electronics components. The P-200 ALD tool is designed …

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Adjust your Bookmarks – CompoundSemi News has a new format!

The original CompoundSemi News was introduced in 2000, innovating “content management” long before any types of standard frameworks came into being. As of our November 11, 2013 edition, we have launched an all new framework that moves to a headline-summary style, and which will allow us an even more real-time …

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Riber Gets Repeat Order From Research Institution in China for R&D MBE System

Riber announced the sale of a 4″ wafer capacity R&D MBE system to an unnamed leading material research institute in China. The laboratory at the research institution in China is reportedly a long-standing customer of Riber, and Riber says that this repeat order consolidates an already mutually successful relationship. Riber …

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Avaco Claims its ALD Process Boosts Conversion Efficiency 30% Compared to Conventional CIGS Solar Cells

Avaco (not to be confused with Avago), a maker of atomic layer deposition (ALD) equipment, announced the development of a new concept buffer layer deposition for photovoltaics. Avaco claims that using its new atomic layer deposition (ALD) process, the energy conversion efficiency of a CIGs solar cell increased approximately 30% …

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Researchers Develop Process to Integrate GeSn MOSFET Devices on Silicon

KULeuven, imec and AIST have developed a solid phase epitaxy process to integrate GermaniumTin (GeSn) metal-oxide semiconductor field-effect transistor (MOSFET) devices on silicon. The researchers demonstrated operation of depletion-mode junctionless GeSn pMOSFET on silicon. The researchers claim that this is an important step toward achieving tensile strain in MOSFET devices, …

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Smit Ovens and SoLayTec Begin Co-operation on Large Area Spatial ALD

Smit Ovens and SoLayTec are joining forces to develop a tool for Large Area applications of spatial ALD. the companies plan to use the tool for the Solliance CIGS/CZTS program. Potential applications for the tool include buffer and barrier layers for Thin film PV and layers for improved TFT structures …

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