MOCVD/MBE Related and Other Processing Equipment – CS/SSLnet

Hua Hong Semiconductor Introduces Third Generation SJNFET Process Platform

Hua Hong Semiconductor Limited of Hong Kong, a pure-play 200mm foundry, reports that it has concluded the Stage I of its R&D for the third-generation Super Junction MOSFET (SJNFET) process platform. The company plans to introduce its process platform to the market gradually during the first half of 2017. Hua …

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Team Demonstrates Room Temperature ALD and Etching

A University of Colorado, Boulder (CU) team recently devised a new method for room temperature ALD. They created the procedure known as electron-enhanced atomic layer deposition (EE-ALD), as part of DARPA’s Local Control of Materials Synthesis (LoCo) program. The CU team proved room-temperature deposition for both silicon and gallium nitride, …

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BluGlass and HC SemiTek Collaborate on LEDs

BluGlass Limited of Australia reported that it will partner with HC SemiTek, a Chinese LED chip manufacturer. BluGlass and HC SemiTek will collaborate to explore low-temperature deposition of Aluminum Nitride (AlN) for use in high brightness LEDs and review the RPCVD advantages for the fabrication of green LEDs. Through the …

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Corial Offers ICP Process for Etching 6″ Patterned Sapphire Substrate Wafers

Corial of Bernin, France, has made available its ICP (inductively coupled plasma) process to etch 6″ patterned sapphire substrate wafers. Corial says that the ICP process can be used in high-volume LED production with the company’s fully automated PS200 single-module platform. The patterned sapphire substrate (PSS) is the LED industry standard …

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MOCVD Fabs can Now USE New k-Space Ex-situ Characterization Tool

k-Space Associates, Inc has introduced the kSA Emissometer. The Emissometer is an ex-situ tool that offers MOCVD fabs essential wafer carrier characterization, including emissivity, uniformity, and defect identification.   After bakes and between runs, traditional MOCVD fabs perform subjective human test inspections of the quality of wafer carriers. The fabs usually …

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Imec and Ghent University Demonstrate InP Laser Arrays on 300 mm Silicon Substrate

Imec and Ghent University demonstrated arrays of indium phosphide lasers monolithically integrated on 300mm silicon substrates in a CMOS pilot line. The researchers described the achievement in  an article in Nature Photonics. The researchers contend that the method they used to fabricate the InP lasers on a silicon substrate could lead …

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Researchers Use IQE GaN-on-SiC Epiwafers to Achieve Highest Reported Power Density for X-band and Ka-band Simultaneously

IQE of Cardiff, UK has reportedly supplied commercially ready 100mm gallium nitride (GaN) on silicon carbide (SiC) epiwafers that achieved record results for both high gain and high power density transistor devices. IQE reports that its 100mm GaN-on-SiC epiwafers for the first time are enabling flexible monolithic microwave integrated circuit …

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k-Space Launches In-situ Tool for Measuring Temperature for MOCVD Fabrication

k-Space Associates, Inc. has released the kSA Scanning Pyro, an in-situ tool for measuring temperature variations across Veeco K465i wafer carriers. Spot temperature measurements on wafer carriers can help MOCVD fabs tune the heater zones in an attempt to achieve uniform temperature profiles during fabrication. The kSA Scanning Pyro makes …

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