High Power Devices/Power Amps

Wolfspeed Showcases GaN RF Devices for Military Applications

Wolfspeed, a Cree Company, is highlighting the importance of its GaN-on-SiC RF devices in providing solutions for modern military communications. Wolfspeed says its RF devices support mobile military communications and counter-IED requirements. The company also says that specifically, its RF devices support the design and advancement of more efficient broadband …

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GaN Systems Joins Wireless Charging Consortium AirFuel Alliance

GaN Systems of Ottawa, Ontario Canada, a company whose technology enables high voltage, high current, and high-frequency wireless charging, has joined the AirFuel Alliance. The AirFuel Alliance is a global, nonprofit consortium of industry front-runners responsible for developing wireless charging standards. GaN Systems intends to bring its wireless technology experience …

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Infineon Launches New Radiation Hardened MOSFETs

Infineon Technologies of Munich, Germany has launched its first radiation hardened MOSFETs based on its proprietary N-channel R9 technology platform. The new MOSFETS decrease the size and weight compared to previous MOSFETs while increasing the power output. Such improvements can be significant in systems including high-throughput satellites, in which the …

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On Semiconductor Acquires Fairchild

ON Semiconductor completed the previously announced acquisition of Fairchild for $2.4 billion in cash. ON Semiconductor Corporation of Phoenix, Arizona and Fairchild Semiconductor International, Inc. of San Jose, California jointly reported completion of the acquisition. “The acquisition of Fairchild is a transformative step in our quest to become the premier supplier …

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Mitsubishi Electric Launches 220W GaN-HEMT

Mitsubishi Electric Corporation of Tokyo, Japan, reported that it has developed a 220W-output power Gallium Nitride High Electron Mobility Transistor (GaN-HEMT) offering unprecedented efficiency. The company designed the 220W-output power GaN-HEMT for 2.6GHz-band Base Transceiver Stations (BTS) of fourth-generation (4G) mobile communication systems. Mitsubishi Electric has scheduled the release of …

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Fairchild Expands GreenBridge™ Series to Include POE

Fairchild of Sunnyvale, California USA, added Power Over Ethernet with the addition of FDMQ8205 to its GreenBridge™ active bridge quad MOSFET technology. FDMQ8205 is for applications that get Power Over Ethernet (POE), such as LED lighting, security cameras, wireless access points, and other Powered Devices (PD). According to Fairchild, the …

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EPC Partners with ASD on GaN-based Wireless Power Transfer

Efficient Power Conversion Corporation (EPC) of Los Angeles has joined forces with ASD Technology Limited (ASD), a Hong-Kong-based company that supplies its eGaN technology. EPC develops gallium nitride (GaN) technology to displace aging MOSFET technology with the company’s eGaN FET and IC’s. GaN technology offers significant advantages in end applications …

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