High Power Devices/Power Amps

New GaN-on-SiC Transistor from Qorvo Boosts Power and Range Critical for Avionics and IFF Applications

Qorvo® of Greensboro, North Carolina claims that its new gallium nitride on silicon carbide (GaN-on-SiC) RF power transistor offers the world’s highest power. The QPD1025 GaN-on-SiC transistor operates with 1.8KW at 65 volts. According to the company, the device delivers the excellent signal integrity and provides the extended reach, which …

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MACOM Introduces MAGM Series of Gan-on-Si MMIC PAs for Massive MIMO Antenna Systems for the 5G Base Station Infrastructure

MACOM Technology Solutions Inc. of Lowell, Massachusetts USA, announced its new MAGM series of GaN-on-Si-based MMIC power amplifiers (PAs) optimized for massive MIMO antenna systems targeting the 5G base station infrastructure. The GaN-on-Si-based MMIC PAs simultaneously covering bands 42 and 43 with flat power and they boast superior power efficiency …

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Comtech Xicom Awarded $1.3 Million Contract for GaN-based Solid-State Power Amplifiers

Comtech Telecommunications Corp. reported that its Santa Clara, California-based subsidiary, Comtech Xicom Technology, Inc., received an order for more than $1.3 million for GaN-based Solid-State Power Amplifiers (SSPAs). The SSPAs will be utilized in an airborne In-Flight Connectivity (IFC) system. “This order is for the increasingly active IFC market, and …

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Wolfspeed Showcases GaN RF Devices for Military Applications

Wolfspeed, a Cree Company, is highlighting the importance of its GaN-on-SiC RF devices in providing solutions for modern military communications. Wolfspeed says its RF devices support mobile military communications and counter-IED requirements. The company also says that specifically, its RF devices support the design and advancement of more efficient broadband …

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