Substrates/Epi-Wafers

X-Fab and Exagan Demonstrate 200mm GaN-on-Silicon Production

X-FAB Silicon Foundries and Exagan, a start-up that specializes in gallium-nitride (GaN) semiconductor technology, demonstrated the ability to mass-production highly efficient, high-voltage power devices on 200-mm GaN-on-silicon wafers. The fabrication uses X-FAB’s standard CMOS production facility in Dresden, Germany. The production accomplishment resulted from a joint development agreement launched in …

Read More

New Monocrystal Ultra-Clean Sapphire Wafers for MicroLEDs

Monocrystal releases UltraClean Sapphire wafers that are ideal for microLEDs

Monocrystal of Stravopol, Russia, announced the release of its new Ultra-Clean sapphire wafers. The company says it applied its cleaning technology to achieve a breakthrough in wafer surface quality. According to Monocrystal, high-precision optoelectronic applications including microLEDs require such high surface quality sapphire wafers. Furthermore, a number of leading LED producers are …

Read More

Fraunhofer Group for Microelectronics and Leibniz Association Form Research Fab Microelectronics Germany

The Fraunhofer Group for Microelectronics is collaborating with the Leibniz Association on a cross-location research and development factory for microelectronics and nanoelectronics. They are calling this cross-location research and development technology pool, Research Fab Microelectronics Germany. Germany’s Federal Ministry of Education and Research (BMBF) is funding the project. On April …

Read More

Monocrystal Debuts 350kg KY Sapphire Crystal

Monocrystal, a sapphire growing and processing company in Stravopol, Russia, recently unveiled the first 350 kg sapphire crystal. The company says that the 350 kg crystal is part of its technological roadmap that targets higher crystal uniformity and more efficient growth of large diameter ingots for optical, size-sensitive, and LED …

Read More

University of Illinois Researchers Develop Potentially Scalable Process for Fabricating GaN-on-Si HEMTs

Researchers from the University of Illinois recently advanced gallium nitride (GaN)-on-silicon transistor technology. They reportedly optimized the composition of the device’s semiconductor layers. Working with industry partners IBM and Veeco, the team formed the high electron mobility transistor (HEMT) structure on a 200 mm silicon substrate using a process that …

Read More

Researchers Improve Crystal Quality of AlGaN

Researchers at Changshu Institute of Technology and Southeast University and in China have improved the crystal quality of a-plane aluminum gallium nitride (AlGaN). The AlGaN was created with Al content of 60% to 68 %. The researchers fabricated the material with metal-organic chemical vapor deposition (MOCVD) on r-plane sapphire [Jianguo …

Read More

BluGlass and IQE Collaborate on Nitride Film Fabrication

Australian company, BluGlass Limited reported that it has entered into a formal Collaboration Agreement with IQE a producer of advanced semiconductor wafer products. Major global chip companies use IQE products to produce the high-performance components for applications including smartphone and wireless infrastructure and base stations, Wi-Fi, GPS, and satellite communications, …

Read More

Monocrystal PV Technology (Changzhou) was issued first in China ISO 9001:2015 Certificate

Stavropol, Russia – Monocrystal, a global leading supplier of synthetic sapphire and PV metallization pastes, today announced that its Chinese subsidiary Monocrystal PV Technology (Changzhou) became ISO 9001:2015 certified.   In June, Monocrystal PV was issued the latest edition of ISO 9001 certificate by an international service corporation TÜV SÜD Shanghai. Monocrystal …

Read More