MOCVD/MBE Equipment

BluGlass Helps Seren Photonics Transfer Semi-Polar GaN Template Process to MOCVD Platform

Australian firm BluGlass Limited has successfully facilitated for its customer, Seren Photonics Limited, the transfer of their GaN template process to the BluGlass MOCVD platform. Seren Photonics of the UK develops semi-polar gallium nitride (GaN) products. Since November 2016, BluGlass has been working with Seren (BluGlass News Release) with the …

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Veeco Acquisition of Ultratech Completed

Veeco Instruments Inc., a supplier of advanced thin film etch and deposition process equipment based in Plainview, New York USA, reported the completion of its acquisition of Ultratech, Inc (Ref: Coverage). Ultratech based in San Jose, California provides lithography, laser-processing and inspection systems for the fabrication of semiconductor devices and LEDs. …

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X-Fab and Exagan Demonstrate 200mm GaN-on-Silicon Production

X-FAB Silicon Foundries and Exagan, a start-up that specializes in gallium-nitride (GaN) semiconductor technology, demonstrated the ability to mass-production highly efficient, high-voltage power devices on 200-mm GaN-on-silicon wafers. The fabrication uses X-FAB’s standard CMOS production facility in Dresden, Germany. The production accomplishment resulted from a joint development agreement launched in …

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Aixtron Delivers CRIUS MOCVD System to SEDI

The German firm, Aixtron SE reported that the company shipped a CRIUS MOCVD system with 4-inch wafer configuration to Sumitomo Electric Device Innovations, Inc. (SEDI) of Japan.SEDI intends to use the system to boost production of GaN-on-SiC (gallium nitride on silicon carbide) devices for RF data transfer applications such as …

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ALLOS Semiconductors Establishes GaN-on-Si Growth Processes on Customer’s Aixtron and Veeco Reactors

ALLOS Semiconductors of Dresden, Germany reported that it established the firm’s epiwafer growth processes using a customer’s Aixtron G5 and Veeco K465i reactors. Therefore, in addition to providing the desired gallium nitride on silicon (GaN-on-Si) epiwafers, the project gave the company a unique performance and cost comparison between Aixtron’s G5 …

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Picosun and Hitachi Hightech to Collaborate on ECR-ALD Technology

Picosun Oy of Espoo, Finland and Hitachi High-Technologies Corporation of Tokyo, Japan have announced a collaboration for the development of plasma-enhanced atomic layer deposition (PE-ALD). The goal of the co-operation is to improve thin film coating technologies. Picosun says that the joint development from the two firms, Microwave Electron Cyclotron …

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Aixtron to Voluntarily Delist from NASDAQ

Financially ailing, German MOCVD equipment maker, Aixtron reported that it plans to voluntarily delist its American Depositary Shares (ADSs) from The NASDAQ Global Select Market. The company also said that it intends to deregister and terminate its reporting obligations under the Securities Exchange Act of 1934, as amended. Aixtron says …

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