Metals and Precursors

SINANO Uses Picosun’s Plasma-ALD System to Produce High-Quality Titanium Nitride (TiN)

Picosun Group, a provider of atomic layer deposition (ALD) equipment based in Finland, and the Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO) report that Picosun’s plasma-ALD technology successfully deposited a high-quality thin-film titanium nitride (TiN). Since the beginning of 2017. SINANO and Picosun have collaborated to develop advanced high-electron-mobility transistors …

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DuPont Scientists Win Heroes of Chemistry Award

Scientists from DuPont Photovoltaic and Advanced Materials (PVAM) based in Wilmington, Delaware were awarded the American Chemical Society’s (ACS) Heroes of Chemistry Award for their invention of DuPont™ Solamet® PV17x. Solamet PV17x is a metallization paste that drastically improves the energy efficiency of solar cells. Fine silver lines are printed …

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Umicore Metal Organic Precursor Production Plant Opens

Umicore’s Precious Metals Chemistry business unit ofHanau, Germany opened its new production plant for advanced metal organic precursor technologies used in the semiconductor and LED markets. The precursor used in semiconductors is TMGa (Trimethylgallium) while the one used for the fabrication of LEDs is TEGa (Triethylgallium). Local and regional politicians, as …

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Much Higher Gallium and Germanium Production Possible

The German Research Foundation will award Max Frenzel of the Helmholtz Institute Freiberg for Resource Technology the Bernd Rendel Prize for Geosciences 2016. In groundbreaking research, geologist Max Frenzel performed comprehensive calculations to estimate the potential annual production of gallium and germanium. Gallium is essential for the production of high-performance …

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IDT and EPC to Collaborate on Integrating GaN and Silicon Technology

Integrated Device Technology, Inc. (IDT®) of San Jose, California reported that the company is collaborating with Efficient Power Conversion (EPC) to develop Gallium nitride (GaN)-based technology. The companies hope to integrate GaN and Silicon using a combination of EPC’s eGaN® technology with IDT solutions. “GaN offers exciting opportunities to develop …

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Nitride Solutions Closes $3 Million Funding Round

Nitride Solutions Inc. of  Wichita Kansas, a developer and producer of  nitride substrates for LEDs, power electronics, and lasers reported reported closing $3M in new funding. Hansol Chemical, Greenpoint Global Mittelstand Fund, and Silicon Pastures Angel Investment Network joined the company’s investor group. The company plans to use the funds …

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Researchers Create Better Predictions About GaN Behavior with Muli-part Simulation Model

Researchers from University College London (UCL) worked with teams at Daresbury Laboratory and the University of Bath to reveal the complex properties of gallium nitride using computer simulations. Accurate predictions of these properties can help make better blue LEDs and predict their output before actual fabrication. LEDs  employ two layers …

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Raytheon UK and Newcastle University to Investigate SiC Interface Defects

Raytheon UK’s semiconductor business in Glenrothes, Scotland, UK together with researchers at Newcastle University, have commenced a Knowledge Transfer Partnership (KTP) project, to improve the performance of silicon carbide (SiC) electronic devices, specifically for use in Raytheon’s own SiC CMOS process. Innovate UK (formerly the Technology Strategy Board) supports the …

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UCSB Researchers Introduce Highest Performing MOSFET

At the 2014 Symposium on VLSI Technology, researchers from the University of California at Santa Barbara (UCSB) introduced the highest performing III-V metal-oxide semiconductor (MOS) field-effect transistors (FETs). The researchers expect that high performance servers will employ the MOSFET and with high performance and lower power consumption.  The Semiconductor Research Corporation …

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