Equipment/Materials

InnoScience Orders Multiple Aixtron MOCVD Systems to Ramp Production of GaN-on-Si Power Devices

Aixtron of Herzogenrath, Germany, reported that InnoScience Technology Co., Ltd ordered multiple AIX G5+ C MOCVD systems. The China-based company intends to use the systems to develop GaN (gallium nitride) power devices. Aixtron says all of the cluster tools will feature a 5×200 mm configuration. InnoScience plans to use the …

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EpiGaN Orders Aixtron AIX G5+ C MOCVD System

Aixtron SE announced that EpiGaN ordered an AIX G5+ C MOCVD system to boost its production capacity of large diameter GaN-on-Si and GaN-on-SiC epiwafers. Belgian company EpiGaN concentrates on GaN-on-Si as well as GaN-on-SiC material product solutions for telecom, power electronics, and sensor applications. The company intends to install the …

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Infineon Acquires Siltectra for its Cold Split Technology

Infineon Technologies AG of Munich, Germany reports that it has acquired Siltectra GmbH, a start-up located in Dresden. The start-up, which was established in 2010, has developed an innovative technology (Cold Split) to efficiently process crystal material with minimal loss of material compared to common sawing technologies. After the acquisition …

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ALLOS and Veeco Complete Latest Phase of GaN-on-Silicon Micro LED Manufacturing Effort

ALLOS Semiconductors GmbH and Veeco Instruments Inc. reported the completion of another phase of their effort to develop GaN-on-Silicon epiwafer technology for microLED production. In the most recent phase of the work, the companies demonstrated the reproducibility of ALLOS’ 200 mm GaN-on-Si epiwafer technology with Veeco’s Propel® MOCVD reactor to produce …

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SINANO Uses Picosun’s Plasma-ALD System to Produce High-Quality Titanium Nitride (TiN)

Picosun Group, a provider of atomic layer deposition (ALD) equipment based in Finland, and the Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO) report that Picosun’s plasma-ALD technology successfully deposited a high-quality thin-film titanium nitride (TiN). Since the beginning of 2017. SINANO and Picosun have collaborated to develop advanced high-electron-mobility transistors …

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Plessey Orders Aixtron AIX G5+ C System for MicroLED Production

German company Aixtron SE reported that UK firm Plessey Semiconductors ordered Aixtron’s AIX G5+ C Planetary Reactor®. Plessey intends to use the metal organic chemical vapor deposition (MOCVD) system to increase its manufacturing capability of gallium nitride on silicon (GaN-on-Si) epitaxial wafers for next-generation microLED applications. The AIX G5+C MOCVD …

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Veeco Announces Changes to Executive Leadership Team

Plainview, New York USA–Veeco Instruments Inc. (NASDAQ: VECO) today announced that John Peeler, Chairman and Chief Executive Officer, will transition to the role of Executive Chairman, effective October 1, 2018.  William J. Miller, currently President, will become Chief Executive Officer and will join the Company’s board of directors bringing the …

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X-Fab to Double 6-Inch SiC Process Capacity

X-FAB Silicon Foundries SE of Tessenderlo, Belgium, plans to double their 6-inch Silicon Carbide (SiC) process capacity at its Lubbock, Texas fab to meet increased demand for high-efficiency power semiconductors. X-FAB’s Lubbock, Texas manufacturing site is certified for automotive manufacturing according to the new IATF-16949:2016 International Automotive Quality Management System …

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