Equipment/Materials

ALLOS Semiconductors Establishes GaN-on-Si Growth Processes on Customer’s Aixtron and Veeco Reactors

ALLOS Semiconductors of Dresden, Germany reported that it established the firm’s epiwafer growth processes using a customer’s Aixtron G5 and Veeco K465i reactors. Therefore, in addition to providing the desired gallium nitride on silicon (GaN-on-Si) epiwafers, the project gave the company a unique performance and cost comparison between Aixtron’s G5 …

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AKHAN Awarded Key Global Patent for Diamond Semiconductor Fabrication

AKHAN Semiconductor, a Chicago-based company that specializes in lab-grown, electronics-grade diamonds, reported that the Taiwan Patent Office issued the firm a key patent. The patent covers a method for fabricating diamond semiconductor materials. According to the firm, such diamond semiconductors have applications in aerospace, automotive, consumer electronics, defense, military, and …

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Picosun and Hitachi Hightech to Collaborate on ECR-ALD Technology

Picosun Oy of Espoo, Finland and Hitachi High-Technologies Corporation of Tokyo, Japan have announced a collaboration for the development of plasma-enhanced atomic layer deposition (PE-ALD). The goal of the co-operation is to improve thin film coating technologies. Picosun says that the joint development from the two firms, Microwave Electron Cyclotron …

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Hua Hong Semiconductor Introduces Third Generation SJNFET Process Platform

Hua Hong Semiconductor Limited of Hong Kong, a pure-play 200mm foundry, reports that it has concluded the Stage I of its R&D for the third-generation Super Junction MOSFET (SJNFET) process platform. The company plans to introduce its process platform to the market gradually during the first half of 2017. Hua …

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University of Illinois Researchers Develop Potentially Scalable Process for Fabricating GaN-on-Si HEMTs

Researchers from the University of Illinois recently advanced gallium nitride (GaN)-on-silicon transistor technology. They reportedly optimized the composition of the device’s semiconductor layers. Working with industry partners IBM and Veeco, the team formed the high electron mobility transistor (HEMT) structure on a 200 mm silicon substrate using a process that …

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Researchers Improve Crystal Quality of AlGaN

Researchers at Changshu Institute of Technology and Southeast University and in China have improved the crystal quality of a-plane aluminum gallium nitride (AlGaN). The AlGaN was created with Al content of 60% to 68 %. The researchers fabricated the material with metal-organic chemical vapor deposition (MOCVD) on r-plane sapphire [Jianguo …

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Aixtron to Voluntarily Delist from NASDAQ

Financially ailing, German MOCVD equipment maker, Aixtron reported that it plans to voluntarily delist its American Depositary Shares (ADSs) from The NASDAQ Global Select Market. The company also said that it intends to deregister and terminate its reporting obligations under the Securities Exchange Act of 1934, as amended. Aixtron says …

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Osram Opto Orders Veeco MOCVD and Processing Systems

U.S.-based Veeco Instruments Inc. reported that Osram Opto Semiconductors GmbH has ordered Metal Organic Chemical Vapor Deposition (MOCVD) and Precision Surface Processing (PSP) systems for its Kulim, Malaysia facility. The order is the first time in recent memory that a major German company has selected MOCVD and processing systems from …

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