Equipment/Materials

Aixtron Delivers CRIUS MOCVD System to SEDI

The German firm, Aixtron SE reported that the company shipped a CRIUS MOCVD system with 4-inch wafer configuration to Sumitomo Electric Device Innovations, Inc. (SEDI) of Japan.SEDI intends to use the system to boost production of GaN-on-SiC (gallium nitride on silicon carbide) devices for RF data transfer applications such as …

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Monocrystal Debuts 350kg KY Sapphire Crystal

Monocrystal, a sapphire growing and processing company in Stravopol, Russia, recently unveiled the first 350 kg sapphire crystal. The company says that the 350 kg crystal is part of its technological roadmap that targets higher crystal uniformity and more efficient growth of large diameter ingots for optical, size-sensitive, and LED …

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ALLOS Semiconductors Establishes GaN-on-Si Growth Processes on Customer’s Aixtron and Veeco Reactors

ALLOS Semiconductors of Dresden, Germany reported that it established the firm’s epiwafer growth processes using a customer’s Aixtron G5 and Veeco K465i reactors. Therefore, in addition to providing the desired gallium nitride on silicon (GaN-on-Si) epiwafers, the project gave the company a unique performance and cost comparison between Aixtron’s G5 …

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AKHAN Awarded Key Global Patent for Diamond Semiconductor Fabrication

AKHAN Semiconductor, a Chicago-based company that specializes in lab-grown, electronics-grade diamonds, reported that the Taiwan Patent Office issued the firm a key patent. The patent covers a method for fabricating diamond semiconductor materials. According to the firm, such diamond semiconductors have applications in aerospace, automotive, consumer electronics, defense, military, and …

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Picosun and Hitachi Hightech to Collaborate on ECR-ALD Technology

Picosun Oy of Espoo, Finland and Hitachi High-Technologies Corporation of Tokyo, Japan have announced a collaboration for the development of plasma-enhanced atomic layer deposition (PE-ALD). The goal of the co-operation is to improve thin film coating technologies. Picosun says that the joint development from the two firms, Microwave Electron Cyclotron …

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Hua Hong Semiconductor Introduces Third Generation SJNFET Process Platform

Hua Hong Semiconductor Limited of Hong Kong, a pure-play 200mm foundry, reports that it has concluded the Stage I of its R&D for the third-generation Super Junction MOSFET (SJNFET) process platform. The company plans to introduce its process platform to the market gradually during the first half of 2017. Hua …

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University of Illinois Researchers Develop Potentially Scalable Process for Fabricating GaN-on-Si HEMTs

Researchers from the University of Illinois recently advanced gallium nitride (GaN)-on-silicon transistor technology. They reportedly optimized the composition of the device’s semiconductor layers. Working with industry partners IBM and Veeco, the team formed the high electron mobility transistor (HEMT) structure on a 200 mm silicon substrate using a process that …

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Researchers Improve Crystal Quality of AlGaN

Researchers at Changshu Institute of Technology and Southeast University and in China have improved the crystal quality of a-plane aluminum gallium nitride (AlGaN). The AlGaN was created with Al content of 60% to 68 %. The researchers fabricated the material with metal-organic chemical vapor deposition (MOCVD) on r-plane sapphire [Jianguo …

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