Veeco Instruments of Plainview, New York USA, reports that the University of Cambridge has ordered Veeco’s Propel™ Power Gallium Nitride (GaN) metal organic chemical vapor deposition (MOCVD) System for GaN-on-silicon power electronics and LED research and development. The system will be installed at the Cambridge Centre for Gallium Nitride headed by Professor Sir Colin Humphreys.
Veeco specifically designed the new Propel Power GaN MOCVD system for the fabrication of power electronics devices. The system features a single-wafer 200mm reactor platform that can process six and eight-inch wafers and deposit high-quality GaN films for the production power electronic devices.
The single-wafer reactor is based on Veeco’s TurboDisc® design and employs the company’s new IsoFlange™ and SymmHeat™ technologies that deliver homogeneous laminar flow and uniform temperature profile across the entire wafer. Veeco points out that customers can easily transfer processes from its K465i™ and MaxBright® systems to the Propel Power GaN MOCVD platform.
Some industry insiders in the fields of both LEDs and power electronics believe that GaN-on-silicon could serve as a more economical alternative to GaN-on-sapphire technology. Professor Sir Colin Humphreys, Director of Research at The University of Cambridge stated, “Gallium nitride is the most important semiconductor material since silicon for power electronics and LEDs. The Propel PowerGaN platform enables the growth of high-performance device structures in a clean and stable process environment with low particle defects.”
Additionally, Cambridge University wants to be on the forefront of technology research and development in the rapidly growing market for GaN-based power electronics. “The Propel PowerGaN single wafer system enables the development of highly-efficient GaN-based power electronic devices that we believe will accelerate the industry’s transition from R&D to high-volume production,” said Jim Jenson, senior vice president, Veeco MOCVD Operations.