Applied Optoelectronics, Inc. of Sugarland, Texas reported the development of 100 Gigabits per second (Gbps) PIN photodiode (PD) arrays for high-speed optical receivers. The high-performance InGaAs PIN PD array is a front illuminated photodiode with high responsivity, a large modulation bandwidth, and low dark current. Applied Optoelectronics designed the 4×25 Gbps PIN PD array for 100 Gbps transceiver modules for 100G EPON transceivers for FTTH and datacenter applications.
PAM4 receivers can also use the PIN PD array in the company’s 200G and 400G data center transceivers. Besides being utilized in the 1×4 array, the 25 Gbps singlet PD can also be used in the 25G SFP28 transceivers for 25G EPON and 5G wireless applications.
“High-speed photodiodes require high-quality epitaxial crystal material with very high purity in order to operate with low noise. In addition, such high-performance photodiodes require very small aperture to achieve high bandwidth. Both of these requirements were achieved by our advanced metalorganic chemical vapor deposition (MOCVD) growth capability and mature wafer processing technology,” commented Dr. Jun Zheng, the VP and head of AOI’s R&D division.
“With in-house manufacturing for both our 100 Gbps PIN PD array and 25 Gbps laser diodes, AOI now controls the two key optical components for its 100G transceivers, which will greatly improve our lead time, cost, and quality. This product line deepens our vertical integration for our current 100G and 200G products, and opens exciting possibilities for 400G and beyond.”