Analog Devices, Inc. of Norwood, Massachusetts USA, introduced a pair of high-performance gallium nitride (GaN) power amplifier (PA) modules. The fully integrated, all solid-state devices expand the company’s existing line of GaN-based PAs. The company claims that the two modules offer one of the highest power-density levels in their class, thereby, minimizing a subsystem’s size and weight.
The HMC7748 and HMC7885 GaN-based PAs address applications that operate between 2 GHz and 6 GHz, such as test and measurement, communications, military/aerospace surveillance and countermeasures, Traveling Wave Tube (TWT) replacement, and radar. The PAs feature ease of use to accelerate prototyping and system design.
The HMC7748 GaN-based PA
The HMC7748 is a fully integrated multistage Power Amplifier Module. It delivers 25 W of saturated output power, accepts inputs up to −8 dBm maximum, and provides a small-signal gain of 60 dB. The PA module, which is internally matched to 50 Ohms, includes bias sequencing and regulation. This PA draws 0.7 A from a 12-V supply and up to 4 A from a 28-V supply. An enable pin offers shutdown capability so the amplifier can be turned on and off without cycling the power supplies.
The HMC7885 GaN-based PA
The HMC7885 is a hermetically sealed, 32-W, hybrid amplifier. This PA features a hermetic flange-mount package for high-reliability applications. It typically delivers 21 dB of small-signal gain and 45 dBm of saturated RF-output power. The device draws 2.2 A of quiescent current from a 28-V dc supply. Both the RF input and output are DC blocked and matched to 50 Ohms for ease of use. An evaluation board is available with a bill of materials and layout to aid design-in and user applications.