Ammono, S.A. of Poland, which produces gallium nitride with the Ammonothermal method, has developed a new type of highly resistive 2-inch AMMONO-GaN semiconductor crystals. The company announced that it began fabricating the 2-inch substrates for space applications. The crystals possess a high structural quality with a narrow X-ray diffraction curves of (20 arcsec) and large curvature radius reaching a few hundred meters. The GaN’s resistivity, estimated by microwave and capacitive methods, is at least 1010 Ω cm, proving the new material’s extremely isolating properties. The crystals were successfully used for production of 2-inch highly-resistive substrates. The European Space Agency PECS program “Low Dislocation GaN for Space Applications” funded the work under contract number 4000108320/13/NL/KML. Dr. Andrew Barnes (ESA) supervised the work.
“Our new semi-insulating AMMONO-GaN substrates,” according to Marcin Zając Ph.D., senior scientist and project coordinator at Ammono, “enable efficient epitaxy and processing of GaN-based High Electron Mobility Transistors (HEMTs). High substrate resistivity prevents from parasitic current leakage in lateral transistors, which is necessary for a proper operation of the final device. Moreover, it is expected, that the offered very low dislocation density of the AMMONO-GaN substrate and epitaxial device structure is a key issue in device reliability, which is essential for the application of the developed material in space electronics -transistors for RF communication, radars, DC-DC power converters, high efficiency solar panels and many others.”
Ammono indicated that the company is interested in establishing commercial and scientific collaboration, both in frame of the domestic and international projects.