The German firm, Aixtron SE reported that the company shipped a CRIUS MOCVD system with 4-inch wafer configuration to Sumitomo Electric Device Innovations, Inc. (SEDI) of Japan.SEDI intends to use the system to boost production of GaN-on-SiC (gallium nitride on silicon carbide) devices for RF data transfer applications such as for the upcoming 5G wireless mobile network. SEDI put the system in operation during the fourth quarter 2016.
According to Aixtron, SEDI has longstanding experience with its Close Coupled Showerhead technology, which Aixtron says enables easy scalability.
Furthermore, Aixtron’s contends that its system has an unmatched reputation precise process control and for 4-inch wafer uniformity. The company also points out that precise process control and 4-inch wafer uniformity are necessary for device production of cost-intensive silicon carbide wafers.
The new reactor comes equipped with optional features including the ARGUS in-situ temperature control, the EpiCurve TT metrology system, and dynamic gap adjustment. The ARGUS monitoring device provides real-time full wafer mapping for optimum control of the growth process. The ability to adjust the process gap between the showerhead and the substrate extends the flexibility of the system.
Sumitomo Electric Device Innovations, Inc. produces a variety of GaN HEMT (High Electron Mobility Transistor) devices for general application as well as radar and mobile phone base-stations. These GaN-on-SiC HEMT devices can enable high power amplification at frequencies of up to 14 GHz RF.