X-Fab Offers Production on 6-Inch SiC Wafers

X-Fab Silicon Foundries of Erfurt, Germany, announced the availability of its 6-inch silicon carbide (SiC) offering from its wafer fab in Lubbock, Texas. With major internal investments in the conversion of capital equipment and the support provided by the PowerAmerica Institute at NC State University, X-FAB Texas has extensively upgraded its manufacturing resources to make them ready for production on silicon carbide (SiC) wafers. The company has added a high-temperature anneal furnace, backgrind equipment for thinning SiC wafers, backside metal sputter and backside laser anneal tools. X-FAB plans to install a high-temperature implanter later this year. With the new production equipment, X-FAB can give the market the means to produce large volumes of SiC devices on 6-inch wafers.

The company has added a high-temperature anneal furnace, backgrind equipment for thinning SiC wafers, backside metal sputter, and backside laser anneal tools. X-FAB plans to install a high-temperature implanter later this year. With the new production equipment, X-FAB can give the market the means to produce large volumes of SiC devices on 6-inch wafers.
X-FAB says in addition to offering decades of semiconductor manufacturing experience, it will now be able to offer higher yields and accelerated ramp-up to full-scale production of SiC devices. X-FAB says that it will supply fabless semiconductor vendors and serve as a second source solution for IDMs with their own SiC manufacturing.

“Current SiC offerings are either IDMs creating their own products or relatively small foundry operations using 4-inch production facilities,” stated Andy Wilson, X-FAB’s Director of Strategic Business Development. “X-FAB is bringing something different to the market, with a SiC capacity of 5k wafers/month ready to utilize and potential to raise this further. We can thus offer a scalable, high quality, secure platform that will enable customers to cost-effectively obtain discrete devices on SiC substrates and also safely apply vital differentiation.”