Gallium Nitride (GaN) RF power semiconductor components gained a significant market share over the previous two years, despite a tough 2016. Furthermore, ABI Research predicts that adoption of GaN RF power devices for wireless infrastructure will increase over 2017. The firm forecasts that GAN RF power devices will make up almost 25% of all high-power semiconductors for mobile wireless infrastructure in 2017.
“The increasing and critical need for wireless data remains an important market driver,” says Lance Wilson, research director at ABI Research. “LTE and the initial building blocks of 5G will fuel the market’s growth for the next five years.”
RF power amplifiers (RFPAs) are integral parts of all base stations for mobile wireless infrastructure.
In fact, ABI contends that RFPAs represent one of the most expensive component sub-assemblies within modern wireless infrastructure equipment. Hence, both RFPA performance and cost drive base station design.
For this reason, ABI asserts that the performance and cost of the RF power semiconductors used in these power amplifiers must keep up with the economic and technological issues facing designers and users of these RF power amplifiers.
“Efficiency, physical size, linearity, and reliability are among the principal concerns,” concludes Wilson. “As price pressures become fiercer, new and innovative techniques and materials must be used to reduce the cost of this important component part while still maintaining performance.”
The firm predicts that the Asia-Pacific region, including China, will drive both present and future revenue in the GaN RF power semiconductor mark.