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The 101 Series

Introduction

Nitrides 101
The original
101 primer
(rough cut edition)

GaN 101
Presentations
Instructors
Ordering

InP 101
Presentations
Instructors
Ordering

 

Sponsored in part by:
   

The "GaN 101" Workshop
 

Fast-track access to understanding the basics of GaN technologies

The live taping of the GaN 101 workshop took place February 26th, in San Diego, California in conjunction with Gorham's Compound Semiconductor Outlook 2001 Conference.

Presentation downloads require a password that will be provided to workshop attendees or with your video order.

The Workshop and Video

What's all the excitement about GaN? Group III Nitrides aka "Gallium Nitride" (GaN) or simply "Nitrides" are the underlying compound semiconductor material combination used to produce the headline-making high brightness (HB) blue spectrum light emitting diodes (LEDs) and semiconductor laser diodes (LDs). Before GaN was proven by Shuji Nakamura to provide the performance and lifetimes needed for true blue (including green, blue, violet and ultraviolet) HB-LEDs and LDs, this technology remained in R&D status. Now all the leading lighting application companies are developing GaN based products as replacements for conventional lighting and lasing, including a replacement for standard white lights, compact disks (CDs) and digital versatile disks (DVDs). And that's just the beginning for GaN! Because of its unique and outstanding wide bandgap qualities, GaN is also growing rapidly as the material technology of choice for HB-LEDs and LDs in the other colors of the spectrum, and for all types of leading edge electronic components.

What does the GaN 101 cover? CompoundSemi Online's 2001 GaN 101 Workshop is a fast-paced basic primer and open dialog on the field, presenting state of the art growth as epiwafers, current progress in bulk growth, leading device designs, and their practical applications in the fields of lighting and electronics. GaN's unique 20+ year history, as developed in parallel in Eastern European countries, Western Europe and America, and in Asia is profiled and emphasis is given to leading edge developments that are catapulting this technology to unprecedented international fame. GaN 101 begins with the fundamental material properties, moves rapidly through today's efforts in bulk substrates, and focuses on state of the art epiwafer manufacturing. Emphasis is on manufacturability of nitrides for both lighting and electronic applications, and addressing critical issues such as: What will it take to make $10 Nitride laser diodes?

The GaN 101 Instructors... Leading authorities in the field instructed GaN 101. Included are some names familiar to GaN historians, specifically Jacques Pankove, co-founder and VP of Technology of Astralux, Inc who is a highly regarded GaN materials and electronic device design pioneer, RPI professor Michael Shur who is noted especially for his longtime devotion to GaN modeling, and Vladimir Dmitriev, President of Technologies and Devices International, Inc. (TDI) which focuses now on bulk growth. Drs Shur and Dmitriev lend a special perspective as natives of Russia. Dr. Dmitriev is noted especially for the original work by his wide bandgap team at Ioffee Institute which was closely affiliated with Cree Inc. in Cree's formative stages of SiC and GaN development. Covering the basics of GaN from its material properties through current and proposed substrate manfacturability is Leo Schowalter, President of Crystal IS (Innovative Semiconductors) Inc., whose new company, much like TDI, is focusing on growing bulk nitride substrates, which are considered in their very early stages of development. Dr. Schowalter is also a Professor at RPI with Michael Shur. Covering epiwafer manufacturing and leading edge device design are Matthew Schurman who was Applications and Advanced Research Director at Emcore at the time the video was recorded, and who is now Director of Operations at Qusion, and Jeff Ramer, Sr. Staff Scientist, both of EMCORE Corporation. Emcore has fielded the vast majority of GaN MOCVD production platforms that are currently in use worldwide, and Emcore's joint venture partners in HB-LEDs and end lighting applications, Uniroyal Optoelectronics and GELcore, are working closely with Emcore's Apps Lab to investigate leading edge GaN epi, components, and GaN-based modules and arrays.

Who will benefit from this video? Anyone desiring an energetic, informative, fast paced overview on this exciting technology, whether you are new to the compounds, want to catch up on their history and recent developments, or just want to get a feel for where the field has been and where it's headed. Just some of the types of people who attended the live taping and were involved in direct dialog with the instructors are: market and financial analysts, technology marketers, and a number of professional technologists retraining themselves to move forward from silicon and the more mature compound semiconductor technologies. Systems designers considering GaN-based devices for next generation lighting and electronic applications can also greatly benefit from viewing this workshop.

No longer available

Presentation Downloads
(The following are available for viewing without a password)

  GaN Substrates are Getting Real (preview), Vladimir Dmitriev, TDI, Inc. (151 KB .pdf)

Presentation Downloads
(password required to view document)

  NItty-Gritty Primer I & Substrates Getting Real II, Leo Schowalter, Crystal IS (855 KB .pdf)
  NItty-Gritty Primer II, Michael Shur, RPI (1004 KB .pdf)
  GaN Substrates are Getting Real, Vladimir Dmitriev, TDI, Inc. (596 KB .pdf)
  Today... and Tomorrow's Epi Story, Matt Schurman & Jeff Ramer, Emcore (482 KB .pdf)

For background and information on the Compound Semiconductor Industry and its other core technologies, visit the

Compound Semiconductor Library
 
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