OSI Laser Diode Introduces InGaAs APD module

OSI Laser Diode, Inc. (LDI) of Edison, New Jersey USA, an OSI Systems Company, introduced the LAPD 3050, an indium gallium arsenide (InGaAs) avalanche photodiode (APD) module. LDI designed the APD module for signal transmission and light level detection applications. The new 50 µm active area device features low back reflection,…

ALLOS Semiconductors Establishes GaN-on-Si Growth Processes on Customer's Aixtron and Veeco Reactors

ALLOS Semiconductors of Dresden, Germany reported that it established the firm's epiwafer growth processes using a customer’s Aixtron G5 and Veeco K465i reactors. Therefore, in addition to providing the desired gallium nitride on silicon (GaN-on-Si) epiwafers, the project gave the company a unique performance and cost comparison between Aixtron's G5…

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OSI Laser Diode Introduces InGaAs APD module

OSI Laser Diode, Inc. (LDI) of Edison, New Jersey USA, an OSI Systems Company, introduced the LAPD 3050, an indium gallium arsenide (InGaAs) avalanche photodiode (APD) module. LDI designed the APD module for signal transmission and light level detection applications. The new 50 µm active area device features low back reflection, …

Read More

ALLOS Semiconductors Establishes GaN-on-Si Growth Processes on Customer’s Aixtron and Veeco Reactors

ALLOS Semiconductors of Dresden, Germany reported that it established the firm’s epiwafer growth processes using a customer’s Aixtron G5 and Veeco K465i reactors. Therefore, in addition to providing the desired gallium nitride on silicon (GaN-on-Si) epiwafers, the project gave the company a unique performance and cost comparison between Aixtron’s G5 …

Read More