STMicroelectronics and Leti to Develop GaN-on-Silicon Technology for Power Conversion

STMicroelectronics, based in Geneva, Switzerland, and Leti, a research institute of CEA Tech, announced their cooperation to industrialize gallium nitride)-on-silicon (GaN-on-Si) technologies for power switching devices. ST says that this power GaN-on-Si technology will enable the company to address high-efficiency, high-power applications including automotive on-board chargers for hybrid and electric…

100G Lambda MSA Consortium Members Release Updated Specifications and Collaborate to Validate Optical Interoperability at 100 GbE and 400 GbE

 The 100G Lambda Multisource Agreement (MSA) Group, which has quickly expanded to 39 member companies, has announced the release D2.0 of three specifications based on 100 Gb/s per wavelength PAM4 optical technology. These specifications target applications for data centers and service provider networks, enabling multi-vendor interoperability of optical transceivers produced…

Delta Electronics Uses Transphorm's GaN FETs

Transphorm Inc.and Delta Electronics reported that the power supply unit (PSU) of Delta Electronics' newest innovation comes from the use of Transphorm’s high-voltage (HV) GaN FETs. Delta’s latest 80Plus Platinum 800 Watt power supply unit now also offers a backup lithium-ion battery. So, in the case of a power outage…

Plessey Orders Aixtron AIX G5+ C System for MicroLED Production

German company Aixtron SE reported that UK firm Plessey Semiconductors ordered Aixtron's AIX G5+ C Planetary Reactor®. Plessey intends to use the metal organic chemical vapor deposition (MOCVD) system to increase its manufacturing capability of gallium nitride on silicon (GaN-on-Si) epitaxial wafers for next-generation microLED applications. The AIX G5+C MOCVD…

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STMicroelectronics and Leti to Develop GaN-on-Silicon Technology for Power Conversion

STMicroelectronics, based in Geneva, Switzerland, and Leti, a research institute of CEA Tech, announced their cooperation to industrialize gallium nitride)-on-silicon (GaN-on-Si) technologies for power switching devices. ST says that this power GaN-on-Si technology will enable the company to address high-efficiency, high-power applications including automotive on-board chargers for hybrid and electric …

Read More

100G Lambda MSA Consortium Members Release Updated Specifications and Collaborate to Validate Optical Interoperability at 100 GbE and 400 GbE

 The 100G Lambda Multisource Agreement (MSA) Group, which has quickly expanded to 39 member companies, has announced the release D2.0 of three specifications based on 100 Gb/s per wavelength PAM4 optical technology. These specifications target applications for data centers and service provider networks, enabling multi-vendor interoperability of optical transceivers produced …

Read More

Delta Electronics Uses Transphorm’s GaN FETs

Transphorm Inc.and Delta Electronics reported that the power supply unit (PSU) of Delta Electronics’ newest innovation comes from the use of Transphorm’s high-voltage (HV) GaN FETs. Delta’s latest 80Plus Platinum 800 Watt power supply unit now also offers a backup lithium-ion battery. So, in the case of a power outage …

Read More

Plessey Orders Aixtron AIX G5+ C System for MicroLED Production

German company Aixtron SE reported that UK firm Plessey Semiconductors ordered Aixtron’s AIX G5+ C Planetary Reactor®. Plessey intends to use the metal organic chemical vapor deposition (MOCVD) system to increase its manufacturing capability of gallium nitride on silicon (GaN-on-Si) epitaxial wafers for next-generation microLED applications. The AIX G5+C MOCVD …

Read More