MicroLink Devices Achieves 37.75 Efficiency with Solar Cell, and NASA and U.S. Navy Award Company Project Grants

MicroLink Devices, Inc. reports that its three-junction epitaxial lift-off (ELO) thin-film solar cell achieved a 37.75% power conversion efficiency, certified by the National Renewable Energy Laboratory (NREL). The testing was under the industry standard air mass 1.5 global (AM1.5G) simulated 1-Sun solar spectrum. In other company news, the U.S. Navy…

Diamond Microwave Launches Compact GaN-based Power Amps

Diamond Microwave of Shipley, UK, announced the launch of a range of compact microwave GaN-based pulsed solid-state power amplifiers (SSPA) in a new ‘slimline’ format. The SSPAs include 200W and 400W models at X-band. At the same time, the company added new models including a rack-mounted 1kW X-band amplifier and…

Chinese Researchers Produce Electrically Injected Near Ultraviolet Laser with AlGaN on Si

Chinese researchers succeeded in fabricating and demonstrating an electrically-injected near-ultraviolet laser using AlGaN on Si. Researchers from the Key Laboratory of Nano-devices and Applications, the Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou, China University of Science and Technology Beijing, and the School of Nano Technology…

Nexperia Licenses Cree GaN Power Device Patent Portfolio

Cree, Inc. reported that it signed a patent license agreement with Nexperia BV, a Dutch company. The non-exclusive, worldwide, royalty-bearing patent license agreement grants Nexperia access to Cree’s extensive gallium nitride (GaN) power device patent portfolio. This GaN power device portfolio includes over 300 issued U.S. and foreign patents that detail…

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MicroLink Devices Achieves 37.75 Efficiency with Solar Cell, and NASA and U.S. Navy Award Company Project Grants

MicroLink Devices, Inc. reports that its three-junction epitaxial lift-off (ELO) thin-film solar cell achieved a 37.75% power conversion efficiency, certified by the National Renewable Energy Laboratory (NREL). The testing was under the industry standard air mass 1.5 global (AM1.5G) simulated 1-Sun solar spectrum. In other company news, the U.S. Navy …

Read More

Chinese Researchers Produce Electrically Injected Near Ultraviolet Laser with AlGaN on Si

Chinese researchers succeeded in fabricating and demonstrating an electrically-injected near-ultraviolet laser using AlGaN on Si. Researchers from the Key Laboratory of Nano-devices and Applications, the Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou, China University of Science and Technology Beijing, and the School of Nano Technology …

Read More

Nexperia Licenses Cree GaN Power Device Patent Portfolio

Cree, Inc. reported that it signed a patent license agreement with Nexperia BV, a Dutch company. The non-exclusive, worldwide, royalty-bearing patent license agreement grants Nexperia access to Cree’s extensive gallium nitride (GaN) power device patent portfolio. This GaN power device portfolio includes over 300 issued U.S. and foreign patents that detail …

Read More