Project QBARKA to Focus on Ultra-High Resolution Magneto Imaging Exploiting Barkhausen Effect

The Compound Semiconductor Centre (CSC) based in Cardiff, UK announced the award of project support from Innovate UK’s Quantum Technology program. Project QBARKA will focus on developing a new method for ultra-high resolution magneto-imaging of metallic microstructure. The new magneto-imaging technique will exploit the Barkhausen effect in ferromagnetic materials. Magnetic…

Vertical Prototype of 1200V GaN Transistors Presented

At the International Electron Devices Meeting of the Institute of Electrical and Electronics Engineers, researchers from MIT, Columbia University, semiconductor firm IQE, IBM, and the Singapore-MIT Alliance for Research and Technology, introduced a new design gallium nitride (GaN) transistor that, in tests, allowed GaN power devices to manage voltages of…

Osram Opto Semiconductors Gives Monocrystal 'Integration Partner' Status

Monocrystal, a Russian-based synthetic sapphire growing and processing firm, reported that Osram Opto Semiconductors has awarded the company the status of “Integration Partner.” The Integration Partner status gives Monocrystal the highest possible supplier grade with Osram Opto Semiconductors GmbH. Osram operates an efficient Supplier Classification Program to evaluate and qualify…

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Project QBARKA to Focus on Ultra-High Resolution Magneto Imaging Exploiting Barkhausen Effect

The Compound Semiconductor Centre (CSC) based in Cardiff, UK announced the award of project support from Innovate UK’s Quantum Technology program. Project QBARKA will focus on developing a new method for ultra-high resolution magneto-imaging of metallic microstructure. The new magneto-imaging technique will exploit the Barkhausen effect in ferromagnetic materials. Magnetic …

Read More

Vertical Prototype of 1200V GaN Transistors Presented

At the International Electron Devices Meeting of the Institute of Electrical and Electronics Engineers, researchers from MIT, Columbia University, semiconductor firm IQE, IBM, and the Singapore-MIT Alliance for Research and Technology, introduced a new design gallium nitride (GaN) transistor that, in tests, allowed GaN power devices to manage voltages of …

Read More