API Debuts 200W PA for Miltary and Shipboard Communications

In Phoenix, Arizona, at the 2015 IEEE MTT-S International Microwave Symposium (IMS), API Technologies Corp of Orlando, Florida USA,  has unveiled two new power amplifier products  for military and public safety applications related to communications and jamming. The QBS-620 Dual Channel, Rack Mount Power Amplifier has a peak output power…

M/A-COM Launches New GaN Wideband Power Amplifier

M/A-COM Technology Solutions Inc. based in Lowell, Massachusetts USA, announced the new NPA1006 Gallium Nitride (GaN) wideband power amplifier. The company optimized the NPA1006 for 20-1000 MHz operation. The GaN on Silicon (Si) HEMT D-Mode Amplifier is ideal for narrowband and broadband applications spanning test and measurement, land mobile radio,…

GaN Systems Launches 60A GaN Power Transistor

GaN Systems Inc., added to its range of E-mode GaN-on-Silicon high power transistors based on its three core proprietary technologies.  The company's new GaN high-power enhancement-mode device, designated the GS65516T, boasts the highest current available at 60A. The GS65516T 650V E-mode power switch features GaN Systems’ new proprietary topside cooling configuration…

X-Fab and Exagan Agree to Develop GaN-on-Silicon Fabrication Techniques on 200mm Wafers

X-FAB Silicon Foundries of Erfurt, Germany, and Exagan of Grenoble, France a start-up focused on Gallium Nitride (GaN) technology, have entered into a joint development agreement to industrialize Exagan’s GaN-on-silicon technology. Under the terms of the agreement, the companies plan to begin producing high-speed power switching components on 200mm wafers,…

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MicroWave Technology Releases a Family of Four GaAs Based Low Noise Amplifier Products across Broad Frequency Ranges at the 2015 IMS (International Microwave Symposium)

Fremont, California USA–MicroWave Technology, Inc. (MwT), a division of IXYS Corporation, announced that it now offers a family of four low noise amplifier products on open-carrier modules with excellent noise figure performance over wide frequency ranges. “The open-carrier module approach provides easy to use building blocks for various military microwave …

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AIXTRON receives multiple tool order for AIX R6

AIXTRON SE, a worldwide leading provider of deposition equipment to the semiconductor industry, today announced that it has received a multiple tool order for its new AIX R6 MOCVD system. The systems were ordered in the second quarter 2015 while shipments will continue until 2016. The customer’s decision to purchase …

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GeneSiC Begins Offering SiC Junction Transistor-Diodes

GeneSiC Semiconductor based in Dulles, Virginia USA, announced the immediate availability of its 20 mOhm-1200 V SiC Junction Transistor-Diodes in an isolated, 4-Leaded mini-module packaging. The company asserts that the SiC Junction Transistor-Diodes enables extremely low Turn-On energies losses for high-frequency power converters. The extremely low Turn-On energies losses lead …

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