NXP Releases GaN RF Power Products for 5G

At the IEEE International Microwave Symposium (IMS 2018) in Philadelphia, Pennsylvania, USA (12-15 June), NXP Semiconductors N.V. of Eindhoven, the Netherlands introduced new products for macro and outdoor small-cell 5G cellular networks including RF gallium nitride (GaN) wideband power transistors. NXP Predicts Future 5G Networks will Depend on GaN and…

Plasma-Therm Acquires Plasma Etch Equipment Maker CORIAL

Plasma-Therm of St. Petersburg, Florida USA, a maker of plasma etch, deposition, and advanced semiconductor packaging equipment announced the successful acquisition of CORIAL, a France-based plasma processing equipment supplier. Plasma-Therm’s plasma-processing and advanced-packaging solutions are used in research, pilot manufacturing, and volume production of wireless, photonics, solid state lighting, MEMS/NEMS,…

Aledia Chooses Veeco Propel System for Development of 3D Nanowire LEDs

Veeco Instruments Inc. of Plainview, New York USA, reported that Aledia, a developer and producer of next-generation 3D LEDs for display applications using its gallium-nitride-nanowires-on-silicon platform, picked Veeco’s Propel® GaN MOCVD system. Aledia says it will use the system to support advanced research and development of the 3D nanowire LEDs.…

Win Semiconductor Expands GaN Processes to Include 0.45m-gate Technology for 5G

WIN Semiconductors Corp, a pure-play compound semiconductor foundry, expanded its gallium nitride (GaN) process capabilities to include a 0.45m-gate technology supporting current and future 5G applications. The firm says its NP45-11 GaN-on-SiC process lets customers design hybrid Doherty power amplifiers for 5G applications such as massive MIMO (multiple-input and multiple-output)…

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NXP Releases GaN RF Power Products for 5G

At the IEEE International Microwave Symposium (IMS 2018) in Philadelphia, Pennsylvania, USA (12-15 June), NXP Semiconductors N.V. of Eindhoven, the Netherlands introduced new products for macro and outdoor small-cell 5G cellular networks including RF gallium nitride (GaN) wideband power transistors. NXP Predicts Future 5G Networks will Depend on GaN and …

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Littlefuse Introduces New 1200V SiC Schottky Diodes

Littelfuse, Inc. added 1200V Schottky Diodes to its portfolio of silicon carbide (SiC) power semiconductor devices. Specifically, the company introduced five new GEN2 Series 1200 V, 3L TO-247 Schottky Diodes and three GEN2 Series 1200 V, 2L TO-263 Schottky Diodes. The company says that when compared with silicon devices, GEN2 …

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